公开(公告)号：US20230215699A1

公开(公告)日：2023-07-06

申请号：US18079142

申请日：2022-12-12

Applicant: SEMES CO., LTD.

Inventor： Myoungsub NOH ,  Seong Gil LEE ,  Dong-Hun KIM ,  Dong Sub OH ,  Jountaek KOO ,  Wan Jae PARK

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32834 ,  H01J37/32082 ,  H01J2237/3346 ,  H01J2237/3341

Abstract: According to one aspect of the present invention, a method of treating a substrate within a chamber includes performing a unit cycle at least one time, in which the unit cycle includes a substrate treatment step of supplying a reaction gas in which radicals constituting plasma of a first treatment gas are mixed with a second treatment gas onto the substrate, wherein the substrate includes a first thin film, and a second thin film having a lower reactivity to the reaction gas than the first thin film.

公开(公告)号：US20230148026A1

公开(公告)日：2023-05-11

申请号：US17716853

申请日：2022-04-08

Applicant: SEMES CO., LTD.

Inventor： Seong Gil LEE ,  Myoung Sub NOH ,  Dong-Hun KIM ,  Young Je UM ,  Dong Sub OH ,  Jun Taek KOO ,  Wan Jae PARK

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32834 ,  H01J2237/334 ,  H01J2237/2007

Abstract: A substrate treating method includes a temperature stabilizing step for stabilizing a temperature of the substrate to a process temperature in a treating space for treating a substrate, a pressure stabilizing step for stabilizing a pressure of a plasma space for generating a plasma and a pressure of the treating space to a process, the plasma space fluid communicating with the treating space, and a treating step for generating the plasma at the plasma space and treating the substrate using the plasma.

公开(公告)号：US20230026796A1

公开(公告)日：2023-01-26

申请号：US17868067

申请日：2022-07-19

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Wan Jae PARK ,  Dong-Hun KIM ,  Seong Gil LEE ,  Ji Hoon PARK

IPC: H01J37/32 ,  H01L21/683

Abstract: The inventive concept provides a substrate treating method. The substrate treating method for treating a substrate at which thin films are stacked and a hole is formed thereon including treating the substrate using a first plasma including an ion, which is a first treating step; and treating the substrate using a second plasma removed of an ion, which is a second treating step.

公开(公告)号：US20230207275A1

公开(公告)日：2023-06-29

申请号：US17854653

申请日：2022-06-30

Applicant: SEMES CO., LTD.

Inventor： Yoon Jong JU ,  Seong Gil LEE ,  Jae Hwan KIM ,  Wan Jae PARK ,  Hye Joon KHEEL ,  Ji Hoon PARK ,  Young Je UM

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32422 ,  H01J2237/334

Abstract: The present invention provides a substrate treating method, including: a first treatment operation of treating the substrate by using first plasma generated by exciting first gas; and a second treatment operation of treating the substrate by using second plasma generated by exciting second gas different from the first gas.

公开(公告)号：US20230207248A1

公开(公告)日：2023-06-29

申请号：US17973985

申请日：2022-10-26

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Min Sung HAN ,  Seong Gil LEE ,  Wan Jae PARK ,  Dong Sub OH ,  Yoon Jong JU ,  Myoung Sub NOH

IPC: H01J37/02 ,  H01J37/32

CPC classification number: H01J37/02 ,  H01J37/3244 ,  H01J37/32467 ,  H01J2237/32

Abstract: An exemplary embodiment of the present invention provides a substrate treating apparatus, including: a chamber having an inner space; a shower head for partitioning the inner space into an upper first zone and a lower second zone, and formed with a plurality of through holes; a support unit for supporting a substrate in the second zone; a gas supply unit for supplying gas to the first zone; a plasma source for forming a plasma in the first zone by exciting the gas; and an adsorption plate coupled to the shower head, in which a surface of the adsorption plate is provided with a material that adsorbs radicals contained in the plasma.

公开(公告)号：US20230197412A1

公开(公告)日：2023-06-22

申请号：US17885543

申请日：2022-08-11

Applicant: SEMES CO, LTD.

Inventor： Seong Gil LEE ,  Young Je UM ,  Myoung Sub NOH ,  Dong Sub OH ,  Min Sung HAN ,  Dong Hun KIM ,  Wan Jae PARK

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32422 ,  H01J37/32449 ,  B08B7/0035 ,  H01J2237/3346 ,  H01J2237/335 ,  H01L21/3065

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

公开(公告)号：US20240209497A1

公开(公告)日：2024-06-27

申请号：US18520621

申请日：2023-11-28

Applicant: SEMES CO., LTD.

Inventor： Jihoon PARK ,  Wan Jae PARK ,  Seong Gil LEE ,  Dong Sub OH ,  Hye Joon KHEEL ,  Yun Woo KIM ,  Da Yeong JEONG

IPC: C23C16/04 ,  C23C16/34 ,  C23C16/56

CPC classification number: C23C16/045 ,  C23C16/345 ,  C23C16/56

Abstract: Disclosed are a method of forming a pattern structure including a silicon nitride. According to the embodiment of the present disclosure, the method of forming a pattern structure includes a step of providing, into a substrate processing apparatus, a substrate having one surface on which a pattern structure including a recess region in which an opening periphery portion and a bottom portion are made of a first silicon nitride is formed, a deposition step of depositing a second silicon nitride on the first silicon nitride, an etching step of etching the second silicon nitride, and a step of performing steps in one cycle n times until the first silicon nitride constituting the bottom portion is removed.

公开(公告)号：US20230317419A1

公开(公告)日：2023-10-05

申请号：US17712044

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Wan Jae PARK ,  Joun Taek KOO ,  Dong Hun KIM ,  Seong Gil LEE ,  Ji Hwan LEE ,  Dong Sub OH ,  Myeong Sub NOH ,  Du Ri KIM

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J2237/3344

Abstract: Provided are a substrate processing apparatus and method capable of improving line edge roughness (LER). The substrate processing apparatus comprises a plasma generating space disposed between an electrode and an ion blocker, a processing space disposed under the ion blocker and for processing a substrate, a first gas supply module for providing a first gas for generating plasma to the plasma generating space, and a second gas supply module for providing an unexcited second gas to the processing space, wherein the first gas is a hydrogen-containing gas, the second gas includes a nitrogen-containing gas, and the substrate includes a photoresist pattern including carbon.

公开(公告)号：US20230317415A1

公开(公告)日：2023-10-05

申请号：US17712035

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Dong Hun KIM ,  Da Som BAE ,  Wan Jae PARK ,  Seong Gil LEE ,  Young Je UM ,  Ji Hwan LEE ,  Dong Sub OH ,  Myoung Sub NOH ,  Joun Taek KOO ,  Du Ri KIM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065 ,  H01J37/32568

Abstract: A substrate processing apparatus and method capable of maximizing plasma uniformity are provided. The substrate processing method comprises providing a substrate processing apparatus including a processing space for processing a substrate and a plasma generating module for generating plasma for processing the substrate, wherein the plasma generating module comprises a plurality of first electrodes disposed in parallel with each other in a first direction, a plurality of second electrodes disposed in parallel with each other in a second direction different from the firs direction, and an array including a plurality of micro plasma cells connected to the plurality of first electrodes and the plurality of second electrodes, providing a process gas to the plurality of micro plasma cells, and providing a reaction gas to the processing space, wherein a first micro plasma cell of the plurality of micro plasma cells is provided with a first energy of a first magnitude, and to a second micro plasma cell is provided with a second energy of a second magnitude different from the first magnitude, so that an amount of radicals in plasma generated in the first micro plasma cell is different from an amount of radicals in plasma generated in the second micro plasma cell.

公开(公告)号：US20230144896A1

公开(公告)日：2023-05-11

申请号：US17879780

申请日：2022-08-03

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Wan Jae PARK ,  Dong Hun KIM ,  Seong Gil LEE ,  Dong Sub OH ,  Myoung Sub NOH ,  Min Sung HAN ,  Jae Hoo LEE

IPC: H01L21/677 ,  H01L21/67 ,  C23C16/44

CPC classification number: H01L21/67766 ,  H01L21/67103 ,  C23C16/4408 ,  H01L21/67034

Abstract: A substrate treating apparatus configuring an individual LL for each PM and a semiconductor manufacturing facility including the same are provided. The semiconductor manufacturing facility comprises an index module including a first transfer robot and for carrying out and transferring a substrate mounted on a container using the first transfer robot, a transfer module including a second transfer robot and for relaying the substrate transferred by the index module using the second transfer robot, a buffer chamber for heating the substrate relayed by the transfer module, and a process chamber for treating the substrate heated by the buffer chamber, wherein the buffer chamber heats the substrate while the substrate waits before being loaded into the process chamber.