WAFER TYPE MEASURING APPARATUS AND MAGNETIC FLUX DENSITY MEASURING METHOD USING THE SAME

    公开(公告)号:US20240151767A1

    公开(公告)日:2024-05-09

    申请号:US18387580

    申请日:2023-11-07

    CPC classification number: G01R31/2831

    Abstract: Provided are a wafer-type measuring apparatus capable of accurately measuring the magnetic flux density in a process chamber without opening the process chamber, and a magnetic flux density measuring method using the wafer-type measuring apparatus. The wafer-type measuring apparatus includes a wafer-type substrate, magnetic flux density sensors disposed on the wafer-type substrate and configured to measure a magnetic flux density, a power supply disposed on the substrate and configured to supply power to the magnetic flux density sensors, a microcontroller unit (MCU) disposed on the substrate and configured to signal process the measured magnetic flux density, and a wireless communication module disposed on the substrate and configured to transmit a signal from the MCU to the outside, and measure the magnetic flux density in a process chamber using a magnetic field.

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