WAFER TYPE MEASURING APPARATUS AND MAGNETIC FLUX DENSITY MEASURING METHOD USING THE SAME

    公开(公告)号:US20240151767A1

    公开(公告)日:2024-05-09

    申请号:US18387580

    申请日:2023-11-07

    CPC classification number: G01R31/2831

    Abstract: Provided are a wafer-type measuring apparatus capable of accurately measuring the magnetic flux density in a process chamber without opening the process chamber, and a magnetic flux density measuring method using the wafer-type measuring apparatus. The wafer-type measuring apparatus includes a wafer-type substrate, magnetic flux density sensors disposed on the wafer-type substrate and configured to measure a magnetic flux density, a power supply disposed on the substrate and configured to supply power to the magnetic flux density sensors, a microcontroller unit (MCU) disposed on the substrate and configured to signal process the measured magnetic flux density, and a wireless communication module disposed on the substrate and configured to transmit a signal from the MCU to the outside, and measure the magnetic flux density in a process chamber using a magnetic field.

    WAFER TYPE SENSOR UNIT AND WAFER TYPE SENSOR UNIT MANUFACTURING METHOD

    公开(公告)号:US20210112662A1

    公开(公告)日:2021-04-15

    申请号:US17069977

    申请日:2020-10-14

    Abstract: Disclosed is a wafer-type sensor unit. The wafer-type sensor unit according to an embodiment of the inventive concept may include a circuit board and an electronic element including a sensor installed on the circuit board. The electronic element may be disposed on the circuit board such that a center of gravity of the wafer-type sensor unit is provided to a center part of the sensor unit. The electronic element may further include a power supply unit and a signal processing unit processing a signal on the circuit board. The wafer-type sensor unit may further include one or more dummy elements installed on the circuit board.

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