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公开(公告)号:US20230154730A1
公开(公告)日:2023-05-18
申请号:US17865395
申请日:2022-07-15
Applicant: SEMES CO., LTD.
Inventor: Young Eun JEON , Yun Sang KIM , Min Sung JEON , Ji Heon KIM , Youngjo JIN , Jin Hee HONG , Sung Min CHOI , Dong Young JANG
IPC: H01J37/32 , H01L27/11582
CPC classification number: H01J37/3244 , H01J37/32522 , H01L27/11582 , H01J2237/334 , H01J2237/022
Abstract: A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber is provided. The substrate processing method comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.