公开(公告)号：US20230154730A1

公开(公告)日：2023-05-18

申请号：US17865395

申请日：2022-07-15

Applicant: SEMES CO., LTD.

Inventor： Young Eun JEON ,  Yun Sang KIM ,  Min Sung JEON ,  Ji Heon KIM ,  Youngjo JIN ,  Jin Hee HONG ,  Sung Min CHOI ,  Dong Young JANG

IPC: H01J37/32 ,  H01L27/11582

CPC classification number: H01J37/3244 ,  H01J37/32522 ,  H01L27/11582 ,  H01J2237/334 ,  H01J2237/022

Abstract: A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber is provided. The substrate processing method comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.

公开(公告)号：US20230064390A1

公开(公告)日：2023-03-02

申请号：US17895540

申请日：2022-08-25

Applicant: SEMES CO., LTD.

Inventor： Min Sung JEON ,  Yun Sang KIM ,  Sung Min CHOI ,  Dong Young JANG ,  Ji Heon KIM ,  Young Jo JIN

IPC: H01J37/32

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode layer on the first plate and including an electrode.