公开(公告)号：US20200295149A1

公开(公告)日：2020-09-17

申请号：US16450149

申请日：2019-06-24

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Donald ZAREMBA ,  Gordon M. GRIVNA ,  Alexander YOUNG

IPC: H01L29/423 ,  H01L21/762

Abstract: Systems and methods of the disclosed embodiments include an electronic device that has a gate electrode for supplying a gate voltage, a source, a drain, and a channel doped to enable a current to flow from the drain to the source when a voltage is applied to the gate electrode. The electronic device may also include a gate insulator between the channel and the gate electrode. The gate insulator may include a first gate insulator section comprising a first thickness, and a second gate insulator section comprising a second thickness that is less than the first thickness. The gate insulator sections thereby improve the safe operating area by enabling the current to flow through the second gate insulator section at a lower voltage than the first gate insulator section.