公开(公告)号：US20220407411A1

公开(公告)日：2022-12-22

申请号：US17806597

申请日：2022-06-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Dean E. PROBST ,  Joseph Andrew YEDINAK ,  Balaji PADMANABHAN ,  Peter A. BURKE ,  Jeffery A. NEULS ,  Ashok CHALLA

IPC: H02M1/34 ,  H01L27/07

Abstract: In some aspects, the techniques described herein relate to a circuit including: a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain; and a snubber circuit coupled between the drain and the source, the snubber circuit including: a diode having a cathode and an anode, the cathode being coupled with the drain; a capacitor having a first terminal coupled with the anode, and a second terminal coupled with the source; and a resistor having a first terminal coupled with the anode and the first terminal of the capacitor, and a second terminal coupled with the source.

公开(公告)号：US20140264369A1

公开(公告)日：2014-09-18

申请号：US14203299

申请日：2014-03-10

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji PADMANABHAN ,  John Michael PARSEY, JR. ,  Ali Salih ,  Prasad Venkatraman

IPC: H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7783 ,  H01L21/845 ,  H01L27/0688 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41791 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66795 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7789 ,  H01L29/785 ,  H01L29/872

Abstract: In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate structure, source electrodes and drain electrodes are formed in spaced relationship to the fin structure. The fin structure provides both polar and semi-polar 2DEG regions. In one embodiment, the gate structure is configured to control current flow in the polar 2DEG region. Shield conductor layers are included above the gate structure and in spaced relationship with drain regions of the semiconductor device.

Abstract translation: 在一个实施例中，III族氮化物材料用于形成半导体器件。 在III族氮化物材料中形成翅片结构，并且栅极结构，源电极和漏电极形成为与翅片结构间隔开的关系。 鳍结构提供极性和半极性2DEG区域。 在一个实施例中，门结构被配置为控制极地2DEG区域中的电流。 屏蔽导体层包括在栅极结构之上并与半导体器件的漏极区间隔开。

公开(公告)号：US20220310802A1

公开(公告)日：2022-09-29

申请号：US17655579

申请日：2022-03-21

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Prasad VENKATRAMAN ,  Peter BURKE ,  Gary Horst LOECHELT ,  Balaji PADMANABHAN ,  Emily M. LINEHAN

IPC: H01L29/40 ,  H01L29/423

Abstract: A method includes defining a plurality of trenches of a first type that extend in a longitudinal direction in a semiconductor substrate, and defining a trench of a second type extending in a lateral direction and intersecting the plurality of trenches of the first type. The trench of the second type is in fluid communication with each of the intersected plurality of trenches of the first type. The method further includes disposing a shield poly layer in the plurality of trenches of the first type and the trench of the second type, disposing an inter-poly dielectric layer and a gate poly layer above the shield poly layer in the plurality of trenches of the first type and the trench of the second type, and forming an electrical contact to the shield poly layer through an opening in the inter-poly dielectric layer and the gate poly layer disposed in the trench of the second type.

公开(公告)号：US20160322485A1

公开(公告)日：2016-11-03

申请号：US15133657

申请日：2016-04-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Chun-Li LIU ,  Peter MOENS

IPC: H01L29/747 ,  H01L23/495 ,  H01L29/74 ,  H01L27/088 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/747 ,  H01L21/8258 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L25/115 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/205 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7416 ,  H01L29/742 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K2217/0009 ,  H03K2217/0018 ,  H01L2224/37099

Abstract: An electronic device can include a bidirectional HEMT. In an aspect, a packaged electronic device can include the bidirectional HEMT can be part of a die having a die substrate connection that is configured to be at a fixed voltage, electrically connected to drain/source or source/drain depending on current flow through the bidirectional HEMT, or electrically float. In another aspect, the electronic device can include Kelvin connections on both the drain/source and source/drain side of the circuit. In a further embodiment, a circuit can include the bidirectional HEMT, switch transistors, and diodes with breakdown voltages to limit voltage swings at the drain/source and source/drain of the switch transistors.

Abstract translation: 电子设备可以包括双向HEMT。 一方面，封装的电子设备可以包括双向HEMT可以是具有被配置为处于固定电压的管芯衬底连接的管芯的一部分，其电连接到漏极/源极或源极/漏极，这取决于通过 双向HEMT或电浮动。 在另一方面，电子设备可以在电路的漏极/源极和源极/漏极侧上包括开尔文连接。 在另一实施例中，电路可以包括双向HEMT，开关晶体管和具有击穿电压的二极管，以限制开关晶体管的漏极/源极和源极/漏极处的电压摆幅。

公开(公告)号：US20140151787A1

公开(公告)日：2014-06-05

申请号：US14176185

申请日：2014-02-10

Applicant: Semiconductor Components Industries, LLC

Inventor： Prasad VENKATRAMAN ,  Balaji PADMANABHAN

IPC: H01L29/78

CPC classification number: H01L29/7827 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813

Abstract: An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate. The electronic device can further include a first conductive electrode and a gate electrode within the first trench. The electronic device can still further include a second conductive electrode within the second trench. The electronic device can include a source region within the patterned semiconductor layer and disposed between the first and second trenches. The electronic device can further include a body contact region within the patterned semiconductor layer and between the first and second trenches, wherein the body contact region is spaced apart from the primary surface. Processes of forming the electronic device can take advantage of forming all trenches during processing sequence.

Abstract translation: 电子器件可以包括晶体管结构，其包括覆盖在衬底上并具有主表面的图案化半导体层，其中所述图案化半导体层限定从所述主表面朝向所述衬底延伸的第一沟槽和第二沟槽。 电子器件还可以包括在第一沟槽内的第一导电电极和栅电极。 电子器件还可以在第二沟槽内进一步包括第二导电电极。 电子器件可以包括图案化半导体层内的源极区域，并且设置在第一和第二沟槽之间。 电子器件还可以包括在图案化的半导体层内以及在第一和第二沟槽之间的体接触区域，其中主体接触区域与主表面间隔开。 形成电子器件的过程可以利用在处理序列期间形成所有沟槽的优点。

公开(公告)号：US20230113308A1

公开(公告)日：2023-04-13

申请号：US17938096

申请日：2022-10-05

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Sauvik CHOWDHURY

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/265 ,  H01L29/06 ,  H01L29/423

Abstract: In a general aspect, a vertical transistor can include a semiconductor region of a first conductivity type, and a plurality of perpendicularly intersecting trenches having a shielded gate structure of the vertical transistor disposed therein. A mesa of the semiconductor region can be defined by the plurality of perpendicularly intersecting trenches. The mesa can include a proximal end portion having a first doping concentration of the first conductivity type, a distal end portion having the first doping concentration of the first conductivity type, and a central portion disposed between the proximal end portion and the distal end portion. The central portion can have a second doping concentration of the first conductivity type that is less than the first doping concentration.

公开(公告)号：US20200295149A1

公开(公告)日：2020-09-17

申请号：US16450149

申请日：2019-06-24

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Donald ZAREMBA ,  Gordon M. GRIVNA ,  Alexander YOUNG

IPC: H01L29/423 ,  H01L21/762

Abstract: Systems and methods of the disclosed embodiments include an electronic device that has a gate electrode for supplying a gate voltage, a source, a drain, and a channel doped to enable a current to flow from the drain to the source when a voltage is applied to the gate electrode. The electronic device may also include a gate insulator between the channel and the gate electrode. The gate insulator may include a first gate insulator section comprising a first thickness, and a second gate insulator section comprising a second thickness that is less than the first thickness. The gate insulator sections thereby improve the safe operating area by enabling the current to flow through the second gate insulator section at a lower voltage than the first gate insulator section.

公开(公告)号：US20190123043A1

公开(公告)日：2019-04-25

申请号：US16225930

申请日：2018-12-19

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Woochul JEON ,  Jason MCDONALD

IPC: H01L27/06 ,  H01L29/10 ,  H01L27/02 ,  H01L23/367 ,  H01L29/417 ,  H01L29/778 ,  H01L21/74 ,  H01L21/8258

Abstract: A method for forming a cascode rectifier structure includes providing a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are provided adjacent a major surface of the heterostructure and a control electrode is provided between the first and second current carrying electrode. A rectifier device is provided integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is provided further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is provided as a two terminal device.

公开(公告)号：US20190067266A1

公开(公告)日：2019-02-28

申请号：US16104039

申请日：2018-08-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Kirk K. HUANG ,  Prasad VENKATRAMAN ,  Emily M. LINEHAN ,  Zia HOSSAIN

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423 ,  H01L29/08 ,  H01L27/088

Abstract: An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

公开(公告)号：US20240088237A1

公开(公告)日：2024-03-14

申请号：US18454328

申请日：2023-08-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN

IPC: H01L29/40 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/407 ,  H01L29/1045 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/4238

Abstract: In an example, a semiconductor device includes an active trench region and an intersecting trench. The active region includes an active shield electrode and the intersecting trench includes an intersecting shield electrode. A coupling trench region connects the active trench region to the intersecting trench region. The coupling trench region includes a coupling shield electrode. The coupling shield electrode and the intersecting shield electrode are provided proximate to a termination mesa region. One or more of the coupling shield electrode or the intersecting shield electrode is thinner than the active shield electrode. The thinner shield electrode reduces depletion in the termination mesa region to improve, among other things, breakdown voltage performance.