公开(公告)号：US20210272920A1

公开(公告)日：2021-09-02

申请号：US17320495

申请日：2021-05-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael J. SEDDON ,  Takashi NOMA ,  Kazuo OKADA ,  Hideaki YOSHIMI ,  Naoyuki YOMODA ,  Yusheng LIN

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/498

Abstract: Implementations of semiconductor devices may include a die having a first side and a second side, a contact pad coupled to the first side of the die, and a metal layer coupled to the second side of the die. A thickness of the die may be no more than four times a thickness of the metal layer.

公开(公告)号：US20220131002A1

公开(公告)日：2022-04-28

申请号：US16949321

申请日：2020-10-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Takashi NOMA ,  Yusheng LIN ,  Kazuo OKADA ,  Hideaki YOSHIMI ,  Shunsuke YASUDA

IPC: H01L29/78 ,  H01L29/739 ,  H01L29/66

Abstract: According to an aspect, a semiconductor device for integrating multiple transistors includes a wafer substrate including a first region and a second region. The first region defines at least a portion of at least one first transistor. The second region defines at least a portion of at least one second transistor. The semiconductor device includes an isolation area located between the first region and the second region, at least one terminal of the at least one first transistor contacting the first region of the wafer substrate, at least one terminal of the at least one second transistor contacting the second region of the wafer substrate, and an encapsulation material, where the encapsulation material includes a portion located within the isolation area.

公开(公告)号：US20190267344A1

公开(公告)日：2019-08-29

申请号：US15903677

申请日：2018-02-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael J. SEDDON ,  Takashi NOMA ,  Kazuo OKADA ,  Hideaki YOSHIMI ,  Naoyuki YOMODA ,  Yusheng LIN

IPC: H01L23/00 ,  H01L23/498 ,  H01L21/78

Abstract: Implementations of semiconductor devices may include a die having a first side and a second side, a contact pad coupled to the first side of the die, and a metal layer coupled to the second side of the die. A thickness of the die may be no more than four times a thickness of the metal layer.