公开(公告)号：US20190148306A1

公开(公告)日：2019-05-16

申请号：US16229186

申请日：2018-12-21

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Yusheng LIN ,  Takashi NOMA ,  Shinzo ISHIBE ,  Kazuyuki SUTO

IPC: H01L23/532 ,  H01L23/00 ,  H01L21/265 ,  H01L29/861 ,  H01L29/739 ,  H01L21/324 ,  H01L23/528 ,  H01L21/22 ,  H01L21/28 ,  H01L23/482 ,  H01L21/304

Abstract: Implementations of a semiconductor device may include: a silicon substrate including a first side and a second side. The second side of the substrate may include an active area. The device may include a metal stack including: a back metallization on the first side of the substrate, an electroplated metal layer on the back metallization; and an evaporated gold metal layer on the electroplated metal layer.