公开(公告)号：US20250015195A1

公开(公告)日：2025-01-09

申请号：US18763192

申请日：2024-07-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Fumito ISAKA ,  Yuichi SATO ,  Toshikazu OHNO ,  Hitoshi KUNITAKE ,  Tsutomu MURAKAWA

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device including an oxide semiconductor layer which is formed over a substrate and includes indium is provided. The oxide semiconductor layer is formed in parallel or substantially in parallel with a surface of the substrate. The oxide semiconductor layer includes a first region, a second region over the first region, and a third region over the second region. The first region is located in a range from a formation surface of the oxide semiconductor layer to greater than or equal to 0 nm to less than or equal to 3 nm in a direction substantially perpendicular to the formation surface. In cross-sectional observation of the oxide semiconductor layer using a transmission electron microscope, bright spots arranged in a layered manner in a direction parallel to the formation surface are observed in each of the first region, the second region, and the third region.

公开(公告)号：US20170243899A1

公开(公告)日：2017-08-24

申请号：US15591145

申请日：2017-05-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Yuichi SATO ,  Yuji ASANO ,  Tetsunori MARUYAMA ,  Tatsuya ONUKI ,  Shuhei NAGATSUKA

IPC: H01L27/12 ,  H01L23/485 ,  H01L23/522 ,  H01L21/8258 ,  H01L27/06 ,  H01L29/786 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L27/1225 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76885 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53295 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1207 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/45 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.

公开(公告)号：US20160276370A1

公开(公告)日：2016-09-22

申请号：US15072076

申请日：2016-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Yuichi SATO ,  Yuji ASANO ,  Tetsunori MARUYAMA ,  Tatsuya ONUKI ,  Shuhei NAGATSUKA

IPC: H01L27/12 ,  H01L23/528 ,  H01L29/16 ,  H01L23/532 ,  H01L29/78 ,  H01L29/786 ,  H01L23/522

CPC classification number: H01L27/1225 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76885 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53295 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1207 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/45 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.

Abstract translation: 提供具有优异电气特性的半导体器件或具有稳定电特性的半导体器件。 半导体器件包括第一晶体管，第二晶体管，第一绝缘体，第二绝缘体，第一布线和第一插塞。 第一晶体管包括硅。 第二晶体管包括氧化物半导体。 第一绝缘体位于第一晶体管的上方。 第二绝缘体位于第一绝缘体之上。 第二晶体管位于第二绝缘体上。 第一布线位于第二绝缘体和第一插头上。 第一晶体管和第二晶体管通过第一布线和第一插头彼此电连接。 第一布线具有低的透气性。 第二绝缘体的氢渗透性低于第一绝缘体的氢渗透性。

公开(公告)号：US20150140730A1

公开(公告)日：2015-05-21

申请号：US14570527

申请日：2014-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/02

CPC classification number: H01L29/78618 ,  G02F1/136204 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/0259 ,  H01L21/265 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

Abstract translation: 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。 通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

公开(公告)号：US20130137255A1

公开(公告)日：2013-05-30

申请号：US13681888

申请日：2012-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoto YAMADE ,  Junichi KOEZUKA ,  Miki SUZUKI ,  Yuichi SATO

IPC: H01L21/265

CPC classification number: H01L29/66969 ,  H01L21/265 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/7869

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

公开(公告)号：US20240395940A1

公开(公告)日：2024-11-28

申请号：US18664493

申请日：2024-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Fumito ISAKA ,  Yuichi SATO ,  Toshikazu OHNO ,  Hitoshi KUNITAKE ,  Tsutomu MURAKAWA

IPC: H01L29/786 ,  H01L29/66 ,  H10B12/00

Abstract: A transistor with high electrical characteristics is provided. A transistor with a high on-state current is provided. A transistor with small parasitic capacitance is provided. A transistor, a semiconductor device, or a memory device which can be miniaturized or highly integrated is provided. The transistor includes a first conductive layer, a second conductive layer, a semiconductor layer, a gate insulating layer over the semiconductor layer, and a gate electrode over the gate insulating layer. A first insulating layer is between the first conductive layer and the second conductive layer. The second conductive layer is over the first insulating layer. The first insulating layer and the second conductive layer include an opening portion reaching the first conductive layer. The semiconductor layer is in contact with a sidewall of the opening portion. The semiconductor layer includes a first oxide layer and a second oxide layer. The first oxide layer includes a first region and a second region. The second oxide layer is between the first region and the second region.

公开(公告)号：US20220359523A1

公开(公告)日：2022-11-10

申请号：US17849854

申请日：2022-06-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi SATO ,  Ryota HODO ,  Yuta IIDA ,  Tomoaki MORIWAKA

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L23/532

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

公开(公告)号：US20220246763A1

公开(公告)日：2022-08-04

申请号：US17608189

申请日：2020-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tsutomu MURAKAWA ,  Yoshinori ANDO ,  Tetsuya KAKEHATA ,  Yuichi SATO ,  Ryota HODO

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/108

Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

公开(公告)号：US20220173228A1

公开(公告)日：2022-06-02

申请号：US17437143

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yuichi SATO ,  Atsushi SHIBAZAKI ,  Kazuki TANEMURA ,  Takashi HIROSE

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12

Abstract: A semiconductor device with little variation in transistor characteristics is provided. A first insulator to a third insulator are formed. A fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film are sequentially formed over the third insulator. Shaping them into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer. The second conductive layer is removed. A fifth insulator and a sixth insulator are formed over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer. An opening reaching the second oxide is formed to form a third oxide, a fourth oxide, a first conductor, a second conductor, a seventh insulator, and an eighth insulator. A fifth oxide, a ninth insulator, and a third conductor are formed in the opening. The fifth insulator is formed using a bias sputtering method.

公开(公告)号：US20210119054A1

公开(公告)日：2021-04-22

申请号：US16981148

申请日：2019-03-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yuichi SATO ,  Hitoshi NAKAYAMA

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/51

Abstract: A semiconductor device having high on-state current and favorable reliability is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a first conductor over the third oxide; a second conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a third conductor positioned over the second insulator and overlapping with the second oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide, and the conductivity of the fourth oxide is higher than the conductivity of the second oxide.