公开(公告)号：US20230246198A1

公开(公告)日：2023-08-03

申请号：US17766336

申请日：2020-09-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kaori OGITA ,  Hiroshi KADOMA ,  Tomoya HIROSE ,  Yumiko YONEDA ,  Yuji IWAKI ,  Tatsuyoshi TAKAHASHI ,  Shunpei YAMAZAKI ,  Mayumi MIKAMI ,  Kazuki TANEMURA

IPC: H01M4/62 ,  H01M4/525 ,  H01M4/131 ,  H01M10/0525

CPC classification number: H01M4/628 ,  H01M4/525 ,  H01M4/131 ,  H01M10/0525 ,  H01M2004/028

Abstract: A positive electrode for a secondary battery having excellent cycle performance is provided. The positive electrode for a secondary battery includes a positive electrode current collector layer, a base film, a positive electrode active material layer, and a cap layer; the base film contains titanium nitride; the positive electrode active material layer contains lithium cobalt oxide; and the cap layer contains titanium oxide. The use of titanium nitride for the base film can inhibit oxidation of the positive electrode current collector and diffusion of metal atoms while ensuring an adequate conductivity. The use of titanium oxide for the cap layer can inhibit a side reaction between the positive electrode active material layer and an electrolyte and collapse of a crystal structure of the electrode active material, improving the cycle performance.

公开(公告)号：US20160365454A1

公开(公告)日：2016-12-15

申请号：US15245268

申请日：2016-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei NODA ,  Satoshi TORIUMI ,  Kazuki TANEMURA

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2.

Abstract translation: 包括氧化物半导体的半导体器件的电特性得到改善。 此外，制造具有小的电特性变化的高度可靠的晶体管。 提供用作基底绝缘膜的氧氮化物绝缘膜和与氧氮化物绝缘膜接触的晶体管。 晶体管包括与用作基极绝缘膜的氧氮化物绝缘膜接触的氧化物半导体膜。 通过热处理从氮氧化物绝缘膜释放的质荷比为30的气体的总量和通过热量从氮氧化物绝缘膜释放的质荷比为32的气体量的两倍 处理量大于或等于5×10 15 / cm 2且小于或等于5×10 16 / cm 2，或大于或等于5×10 15 / cm 2且小于或等于3×10 16 / cm 2。

公开(公告)号：US20160190338A1

公开(公告)日：2016-06-30

申请号：US14976474

申请日：2015-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Daisuke MATSUBAYASHI ,  Kazuki TANEMURA

IPC: H01L29/786 ,  H01L21/479 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L21/479 ,  H01L27/1225 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/42384 ,  H01L29/66833 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/7883 ,  H01L29/792

Abstract: To provide a semiconductor device suitable for high reliability and high-speed operation. The semiconductor device includes a first conductor, a first insulator, a second insulator, a semiconductor, and an electron trap layer. The semiconductor includes a channel formation region. The first conductor includes a region overlapping with the channel formation region with the first insulator provided therebetween. The second insulator is placed to include a region in contact with a side surface of the first conductor. The electron trap layer is placed to face the first conductor with the second insulator provided therebetween.

Abstract translation: 提供适用于高可靠性和高速运行的半导体器件。 半导体器件包括第一导体，第一绝缘体，第二绝缘体，半导体和电子陷阱层。 半导体包括沟道形成区域。 第一导体包括与沟道形成区重叠的区域，其间设置有第一绝缘体。 第二绝缘体被放置成包括与第一导体的侧表面接触的区域。 电子陷阱层被放置为面对第一导体，其间设置有第二绝缘体。

公开(公告)号：US20240379941A1

公开(公告)日：2024-11-14

申请号：US18576873

申请日：2022-06-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jo SAITO ,  Tatsuyoshi TAKAHASHI ,  Kunihiko SUZUKI ,  Shunsuke HOSOUMI ,  Mayumi MIKAMI ,  Kazuki TANEMURA ,  Yuji IWAKI ,  Shunpei YAMAZAKI

IPC: H01M4/36 ,  C01G51/00 ,  H01M4/02 ,  H01M4/1315 ,  H01M4/525 ,  H01M10/0525

Abstract: A positive electrode active material that is unlikely to generate defects even when charging and discharging at a high voltage and/or at a high temperature is provided. A positive electrode active material in which crystal structures are unlikely to collapse even when charging and discharging are repeated is also provided. The positive electrode active material contains lithium, cobalt, oxygen, and an additive element. The positive electrode active material includes a surface portion, an inner portion. The positive electrode active material contains the additive element in the surface portion. The surface portion is a region extending from a surface of the positive electrode active material to a depth of 10 nm or less toward the inner portion, and the surface portion and the inner portion are topotaxy. A degree of diffusion of the additive element vary between crystal planes of the surface portion, and the additive element is at least one or two or more selected from nickel, aluminum, and magnesium.

公开(公告)号：US20220359870A1

公开(公告)日：2022-11-10

申请号：US17734744

申请日：2022-05-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi MIKAMI ,  Jo SAITO ,  Kazuki TANEMURA ,  Tatsuyoshi TAKAHASHI ,  Yohei MOMMA ,  Kazuya SHIMADA ,  Kunihiro FUKUSHIMA

IPC: H01M4/525

Abstract: A positive electrode active material in which a discharge capacity decrease due to charge and discharge cycles is suppressed and a secondary battery including the positive electrode active material are provided. A positive electrode active material in which a change in a crystal structure, e.g., a shift in CoO2 layers is small between a discharged state and a high-voltage charged state is provided. For example, a positive electrode active material that has a layered rock-salt crystal structure belonging to the space group R-3m in a discharged state and a crystal structure belonging to the space group P2/m in a charged state where x in LixCoO2 is greater than 0.1 and less than or equal to 0.24 is provided. When the positive electrode active material is analyzed by powder X-ray diffraction, a diffraction pattern has at least diffraction peaks at 2θ of 19.47±0.10° and 2θ of 45.62±0.05°.

公开(公告)号：US20200152671A1

公开(公告)日：2020-05-14

申请号：US16736862

申请日：2020-01-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tetsuhiro TANAKA ,  Kazuki TANEMURA ,  Daisuke MATSUBAYASHI

IPC: H01L27/12 ,  H01L23/522

Abstract: A miniaturized transistor with reduced parasitic capacitance and highly stable electrical characteristics is provided. High performance and high reliability of a semiconductor device including the transistor is achieved. A first conductor is formed over a substrate, a first insulator is formed over the first conductor, a layer that retains fixed charges is formed over the first insulator, a second insulator is formed over the layer that retains fixed charges, and a transistor is formed over the second insulator. Threshold voltage Vth is controlled by appropriate adjustment of the thicknesses of the first insulator, the second insulator, and the layer that retains fixed charges.

公开(公告)号：US20170040424A1

公开(公告)日：2017-02-09

申请号：US15220498

申请日：2016-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Kazuki TANEMURA ,  Daisuke MATSUBAYASHI

IPC: H01L29/40 ,  H01L49/02 ,  H01L27/06

Abstract: A miniaturized transistor with reduced parasitic capacitance and highly stable electrical characteristics is provided. High performance and high reliability of a semiconductor device including the transistor is achieved. A first conductor is formed over a substrate, a first insulator is formed over the first conductor, a layer that retains fixed charges is formed over the first insulator, a second insulator is formed over the layer that retains fixed charges, and a transistor is formed over the second insulator. Threshold voltage Vth is controlled by appropriate adjustment of the thicknesses of the first insulator, the second insulator, and the layer that retains fixed charges.

Abstract translation: 提供了具有降低的寄生电容和高度稳定的电特性的小型化晶体管。 实现了包括晶体管的半导体器件的高性能和高可靠性。 第一导体形成在衬底上，在第一导体上形成第一绝缘体，在第一绝缘体上形成保持固定电荷的层，在保持固定电荷的层上形成第二绝缘体，形成晶体管 在第二绝缘体上。 通过适当调节第一绝缘体，第二绝缘体和保持固定电荷的层的厚度来控制阈值电压Vth。

公开(公告)号：US20240396357A1

公开(公告)日：2024-11-28

申请号：US18687412

申请日：2022-08-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takeshi OSADA ,  Haruki KATAGIRI ,  Kyoichi MUKAO ,  Mayumi MIKAMI ,  Kazutaka KURIKI ,  Kazuki TANEMURA

IPC: H02J7/00 ,  H01M10/42

Abstract: A secondary battery management system for achieving a secondary battery capable of being used even at low temperatures. The secondary battery management system includes a secondary battery that is charged and discharged at higher than or equal to −50° C. and lower than or equal to 0° C., a first circuit having a function of measuring a voltage of the secondary battery, a second circuit having a function of measuring a current of the secondary battery, and a control circuit to which information on voltage from the first circuit or information on current from the second circuit is input. The control circuit starts charging to the secondary battery. The control circuit performs arithmetic operation of data showing battery characteristics on the basis of a value input from the first circuit or the second circuit. The control circuit detects a local maximum value of the data. The control circuit stops the charging when detecting the local maximum value.

公开(公告)号：US20240396048A1

公开(公告)日：2024-11-28

申请号：US18697576

申请日：2022-09-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yusuke YOSHITANI ,  Noriko MIYAIRI ,  Mayumi MIKAMI ,  Kazuki TANEMURA ,  Kanta ABE ,  Tatsuyoshi TAKAHASHI ,  Kenta NAKANISHI ,  Shunpei YAMAZAKI

IPC: H01M4/62 ,  H01M4/02 ,  H01M4/36 ,  H01M4/525 ,  H01M4/58

Abstract: A secondary battery includes a positive electrode active material layer including a primary particle containing lithium, nickel, cobalt, and manganese and a secondary particle formed by aggregation of the primary particles, and calcium is contained between adjacent primary particles of the secondary particle. With such a structure, calcium inhibits oxygen release from the primary particle in charging and discharging, whereby the reliability of the secondary battery is improved.

公开(公告)号：US20230402280A1

公开(公告)日：2023-12-14

申请号：US18232881

申请日：2023-08-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazuki TANEMURA ,  Shota SAMBONSUGE ,  Naoki OKUNO

IPC: H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L21/02266 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02172 ,  H01L21/02293

Abstract: A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film is higher than or equal to 80° C. and lower than or equal to 400° C., and the flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of the total flow rate of the gas.