公开(公告)号：US20250031422A1

公开(公告)日：2025-01-23

申请号：US18785690

申请日：2024-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke YAMAGUCHI ,  Shinobu KAWAGUCHI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yasumasa YAMANE ,  Tomosato KANAGAWA

IPC: H01L29/26 ,  H10B12/00

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US20230144044A1

公开(公告)日：2023-05-11

申请号：US17912753

申请日：2021-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoichi Iikubo ,  Daisuke YAMAGUCHI ,  Yuichi YANAGISAWA

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L29/7869 ,  H10B12/05

Abstract: A method for manufacturing a semiconductor device with a high yield is provided. In a semiconductor device including an oxide semiconductor over a substrate, when an insulator in contact with the oxide semiconductor, such as a gate insulator or an interlayer film, is deposited, the insulator can be deposited without diffusion of hydrogen into the oxide semiconductor by setting a constant derived from deposition conditions within a given range. Specifically, setting values of deposition power, the effective electrode area, deposition pressure, and the flow rate of a deposition gas containing hydrogen in the deposition conditions can be selected as appropriate.

公开(公告)号：US20200212185A1

公开(公告)日：2020-07-02

申请号：US16693974

申请日：2019-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke YAMAGUCHI ,  Shinobu KAWAGUCHI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yasumasa YAMANE ,  Tomosato KANAGAWA

IPC: H01L29/26 ,  H01L27/108

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US20220102505A1

公开(公告)日：2022-03-31

申请号：US17550646

申请日：2021-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke YAMAGUCHI ,  Shinobu KAWAGUCHI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yasumasa YAMANE ,  Tomosato KANAGAWA

IPC: H01L29/26 ,  H01L27/108

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US20200075769A1

公开(公告)日：2020-03-05

申请号：US16553287

申请日：2019-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshikazu OHNO ,  Daisuke YAMAGUCHI ,  Tomonori NAKAYAMA

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L27/15

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.