公开(公告)号：US20230380180A1

公开(公告)日：2023-11-23

申请号：US18030334

申请日：2021-10-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA ,  Masahiro TAKAHASHI ,  Hitoshi KUNITAKE

IPC: H10B53/30

CPC classification number: H10B53/30

Abstract: A ferroelectric device (100) that includes a metal nitride film (130) with favorable ferroelectricity is provided. The ferroelectric device comprises a first conductor (110), a metal nitride film over the first conductor, a second conductor (120) over the metal nitride film, a first insulator (155) over the second conductor, and a second insulator (152) over the first insulator. The first insulator includes regions in contact with the side surface of the metal nitride film and the side surface and the top surface of the second conductor; the metal nitride film has ferroelectricity; the metal nitride film contains a first element, a second element, and nitrogen; the first element is one or more elements selected from Group 13 elements; the second element is one or more elements selected from Group 2 elements to Group 6 elements and Group 13 elements other than the first element; the first conductor and the second conductor each contain nitrogen; the first insulator contains aluminum and oxygen; and the second insulator contains silicon and nitrogen.

公开(公告)号：US20170025544A1

公开(公告)日：2017-01-26

申请号：US15215801

申请日：2016-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Tomonori NAKAYAMA ,  Motoki NAKASHIMA

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/7849 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Abstract translation: 在包括氧化物半导体的晶体管中，抑制了电特性的变化，提高了可靠性。 晶体管包括在第一绝缘膜上的氧化物半导体膜; 氧化物半导体膜上的第二绝缘膜; 第二绝缘膜上的金属氧化物膜; 金属氧化物膜上的栅电极; 以及氧化物半导体膜和栅极上的第三绝缘膜。 氧化物半导体膜包括与栅电极重叠的沟道区域，与第三绝缘膜接触的源极区域和与第三绝缘膜接触的漏极区域。 源区和漏区含有氢，硼，碳，氮，氟，磷，硫，氯，钛和稀有气体中的一种或多种。

公开(公告)号：US20160351720A1

公开(公告)日：2016-12-01

申请号：US15159032

申请日：2016-05-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA ,  Motoki NAKASHIMA ,  Tomoki HIRAMATSU

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/133 ,  G02F1/1368 ,  G02F1/1337 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78606 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics and improve reliability in a transistor. The transistor includes a first gate electrode, a first insulating film over the first gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the oxide semiconductor film, a fourth insulating film over the third insulating film, a second gate electrode over the fourth insulating film, and a fifth insulating film over the second gate electrode. One or more of the second insulating film, the third insulating film, and the fourth insulating film include a halogen element. The halogen element is detected from one or more of a top surface, a bottom surface, and a side surface of the oxide semiconductor film.

Abstract translation: 抑制电特性的变化，提高晶体管的可靠性。 晶体管包括第一栅电极，第一栅电极上的第一绝缘膜，第一绝缘膜上的第二绝缘膜，第二绝缘膜上的氧化物半导体膜，与氧化物半导体膜电连接的源极， 与氧化物半导体膜电连接的漏电极，氧化物半导体膜上的第三绝缘膜，第三绝缘膜上的第四绝缘膜，第四绝缘膜上的第二栅电极，以及第二绝缘膜上的第五绝缘膜 。 第二绝缘膜，第三绝缘膜和第四绝缘膜中的一个或多个包括卤素元素。 卤素元素从氧化物半导体膜的顶表面，底表面和侧表面中的一个或多个检测。

公开(公告)号：US20230069109A1

公开(公告)日：2023-03-02

申请号：US17797189

申请日：2021-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA

IPC: H01L29/04 ,  H01L29/66 ,  H01L29/786

Abstract: A novel metal oxide and a formation method thereof are provided. The metal oxide includes a first crystal, a second crystal, and a region positioned between the first crystal and the second crystal. The c-axis of the first crystal is substantially parallel to the c-axis of the second crystal. The crystallinity of the region is lower than those of the first crystal and the second crystal. The width of the region in the direction perpendicular to the c-axis of the first crystal is greater than 0 nm and less than 1.5 nm. The first crystal and the second crystal each have a layered crystal structure.

公开(公告)号：US20200235100A1

公开(公告)日：2020-07-23

申请号：US16652808

申请日：2018-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA ,  Haruyuki BABA

IPC: H01L27/108 ,  H01L29/792 ,  H01L29/51 ,  H01L29/786 ,  H01L27/088

Abstract: A semiconductor device having high frequency characteristics and high reliability is provided. Part of metal elements included in the oxide semiconductor including indium is replaced with cerium (Ce). When indium (In) included in the oxide semiconductor is replaced with cerium, electrons serving as carriers are released. Thus, by adjusting the ratio of cerium included in the oxide semiconductor, the carrier density of the oxide semiconductor can be controlled. In the case where the transistor is used for a memory element or the like, a cerium atom may be greater than or equal to 0.01 atomic % and less than or equal to 1.0 atomic % of metal atoms included in the oxide semiconductor.

公开(公告)号：US20250008780A1

公开(公告)日：2025-01-02

申请号：US18707700

申请日：2022-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Masahiro KATAYAMA ,  Rai SATO ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Masayoshi DOBASHI ,  Koji KUSUNOKI ,  Tomonori NAKAYAMA

IPC: H10K59/122 ,  H10K59/131

Abstract: A display apparatus with high resolution is provided. The display apparatus includes a transistor, a light-emitting device, a first insulating layer, a second insulating layer, and a first conductive layer. The transistor includes a semiconductor layer and a second conductive layer electrically connected to the semiconductor layer. The light-emitting device includes a pixel electrode. The first insulating layer is provided over the transistor and includes a first opening reaching the second conductive layer. The first conductive layer covers the first opening. The second insulating layer is provided over the first insulating layer and includes a second opening in a region overlapping with the first opening. The pixel electrode covers a top surface of the second insulating layer and the second opening. The pixel electrode is electrically connected to the second conductive layer through the first conductive layer. An end portion of the first insulating layer is positioned over the second conductive layer. An end portion of the second insulating layer is positioned over the first conductive layer. An end portion of the second insulating layer is positioned outward from the end portion of the first insulating layer.

公开(公告)号：US20240322018A1

公开(公告)日：2024-09-26

申请号：US18678538

申请日：2024-05-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Tomonori NAKAYAMA ,  Motoki NAKASHIMA

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/417 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/7849 ,  H01L29/786

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

公开(公告)号：US20210328037A1

公开(公告)日：2021-10-21

申请号：US17272399

申请日：2019-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryo TOKUMARU ,  Shinya SASAGAWA ,  Tomonori NAKAYAMA

IPC: H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/441

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a first insulator over the second oxide, a first conductor over the first insulator, and a second conductor and a third conductor over the second oxide. The second conductor includes a first region and a second region, the third conductor includes a third region and a fourth region, the second region is positioned above the first region, the fourth region is positioned above the third region, and each of the second conductor and the third conductor contains tantalum and nitrogen. The atomic ratio of nitrogen to tantalum in the first region is higher than the atomic ratio of nitrogen to tantalum in the second region, and the atomic ratio of nitrogen to tantalum in the third region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.

公开(公告)号：US20170141330A1

公开(公告)日：2017-05-18

申请号：US15349608

申请日：2016-11-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiaki Tsunoi ,  Hideko INOUE ,  Tomonori NAKAYAMA

IPC: H01L51/00 ,  C09K11/06 ,  C07F15/00

CPC classification number: H01L51/0085 ,  C07F15/0033 ,  C09K11/06 ,  H01L51/5016 ,  Y02P20/582

Abstract: To provide a novel organometallic complex having high color purity. The organometallic complex is represented by General Formula (G1), and includes iridium and a ligand. The ligand includes a five-membered aromatic heterocycle including two or more nitrogen atoms and a plurality of aryl groups bonded to the five-membered aromatic heterocycle. At least one of the plurality of aryl groups includes a pentafluorosulfanyl group as a substituent. In General Formula (G1), one of P1 and P2 represents nitrogen and the other represents carbon, or both of P1 and P2 represent carbon; Q1 represents any of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 5 to 8 carbon atoms, a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms; Q2 represents any of hydrogen and a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms; each of Ar1 and Ar2 independently represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms; and any one of Q1, Ar1, and Ar2 includes a pentafluorosulfanyl group.

公开(公告)号：US20240321577A1

公开(公告)日：2024-09-26

申请号：US18668768

申请日：2024-05-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA ,  Tomosato KANAGAWA ,  Shunpei YAMAZAKI

IPC: H01L21/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  H01L21/66

CPC classification number: H01L21/02554 ,  C23C14/081 ,  C23C14/086 ,  C23C14/087 ,  C23C14/34 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02631 ,  H01L22/12 ,  C23C14/0036 ,  C23C14/08

Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.