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公开(公告)号：US20240224673A1
公开(公告)日：2024-07-04
申请号：US18604752
申请日：2024-03-14
发明人： Mizuki SATO
IPC分类号： H10K59/131 , H01L27/12 , H01L27/15 , H01L29/786 , H10K59/121 , H10K59/124 , G02F1/1362 , H10B12/00 , H10K59/12
CPC分类号： H10K59/131 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/156 , H01L29/786 , H01L29/78654 , H01L29/78663 , H01L29/78672 , H01L29/78696 , H10K59/1213 , H10K59/1216 , H10K59/124 , G02F1/1362 , H10B12/30 , H10K59/12
摘要： An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
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公开(公告)号：US20230209940A1
公开(公告)日：2023-06-29
申请号：US18120022
申请日：2023-03-10
发明人： Mizuki SATO
IPC分类号： H10K59/131 , H10K59/124 , H10K59/121 , H01L29/786 , H01L27/12 , H01L27/15
CPC分类号： H10K59/131 , H10K59/124 , H10K59/1213 , H10K59/1216 , H01L29/786 , H01L27/124 , H01L27/1255 , H01L29/78696 , H01L27/1222 , H01L29/78663 , H01L29/78672 , H01L27/1251 , H01L27/156 , H01L29/78654 , G02F1/1362
摘要： An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
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公开(公告)号：US20200127074A1
公开(公告)日：2020-04-23
申请号：US16718273
申请日：2019-12-18
发明人： Mizuki SATO
IPC分类号： H01L27/32 , H01L29/786 , H01L27/15 , H01L27/12
摘要： An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
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公开(公告)号：US20180145126A1
公开(公告)日：2018-05-24
申请号：US15874939
申请日：2018-01-19
发明人： Mizuki SATO
IPC分类号： H01L27/32
CPC分类号： H01L27/3276 , G02F1/1362 , H01L27/10805 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/156 , H01L27/3244 , H01L27/3258 , H01L27/3262 , H01L27/3265 , H01L29/786 , H01L29/78654 , H01L29/78663 , H01L29/78672 , H01L29/78696
摘要： An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
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公开(公告)号：US20170141178A1
公开(公告)日：2017-05-18
申请号：US15421611
申请日：2017-02-01
发明人： Mizuki SATO
IPC分类号： H01L27/32
CPC分类号： H01L27/3276 , G02F1/1362 , H01L27/10805 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/156 , H01L27/3244 , H01L27/3258 , H01L27/3262 , H01L27/3265 , H01L29/786 , H01L29/78654 , H01L29/78663 , H01L29/78672 , H01L29/78696
摘要： An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
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公开(公告)号：US20200227513A1
公开(公告)日：2020-07-16
申请号：US16833829
申请日：2020-03-30
发明人： Mizuki SATO
IPC分类号： H01L27/32 , H01L29/786 , H01L27/12 , H01L27/15
摘要： An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
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公开(公告)号：US20190157374A1
公开(公告)日：2019-05-23
申请号：US16240834
申请日：2019-01-07
发明人： Mizuki SATO
IPC分类号： H01L27/32 , H01L29/786 , H01L27/12 , H01L27/15
CPC分类号： H01L27/3276 , G02F1/1362 , H01L27/10805 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/156 , H01L27/3244 , H01L27/3258 , H01L27/3262 , H01L27/3265 , H01L29/786 , H01L29/78654 , H01L29/78663 , H01L29/78672 , H01L29/78696
摘要： An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
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公开(公告)号：US20210151545A1
公开(公告)日：2021-05-20
申请号：US17104235
申请日：2020-11-25
发明人： Mizuki SATO
IPC分类号： H01L27/32 , H01L29/786 , H01L27/12 , H01L27/15
摘要： An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.
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公开(公告)号：US20170179213A1
公开(公告)日：2017-06-22
申请号：US15449411
申请日：2017-03-03
发明人： Yasuyuki Takahashi , Mizuki SATO
CPC分类号： H01L27/3272 , G09G3/3233 , G09G2300/0408 , G09G2300/0842 , G09G2320/0242 , G09G2320/029 , G09G2320/041 , G09G2320/043 , G09G2330/021 , H01L27/12 , H01L27/3225 , H01L27/3248 , H01L29/78633 , H01L33/58 , H01L51/5203 , H01L51/5268 , H01L51/5281 , H01L51/56 , H01L2924/0002 , H01L2924/00
摘要： A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.
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