公开(公告)号：US20140295261A1

公开(公告)日：2014-10-02

申请号：US14220354

申请日：2014-03-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE ,  Teppei OGUNI ,  Tatsuya TAKAHASHI ,  Takuya MIWA ,  Aya HITOTSUYANAGI

IPC: H01M10/0566 ,  H01M4/587 ,  H01M10/052

CPC classification number: H01M10/0566 ,  H01M4/5825 ,  H01M4/587 ,  H01M10/0525 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2300/0037

Abstract: An object is to provide an electrochemical device in which lithium deposition and reduction in battery capacity can be inhibited even when the concentration of a lithium salt in an electrolytic solution is lower than 1.0 M. Lithium deposition can be inhibited and lithium whiskers can be dissolved by applying an inversion pulse current for a short time more than once in a charging period of a secondary battery which deteriorates. By applying the inversion pulse current more than once, deterioration of a lithium-ion secondary battery due to repeated charging can be suppressed even when it is a secondary battery in which the concentration of a lithium salt in an electrolytic solution is lower than 1.0 M and therefore lithium is easily deposited.

Abstract translation: 本发明的目的是提供一种电化学装置，其中即使当电解液中的锂盐浓度低于1.0M时，锂沉积和电池容量的降低也可以被抑制。可以抑制锂沉积并且可以通过以下方式溶解锂晶须 在劣化的二次电池的充电期间，多次施加反转脉冲电流多次。 通过多次施加反转脉冲电流，即使是电解液中的锂盐浓度低于1.0M的二次电池，也能够抑制由于重复充电引起的锂离子二次电池的劣化， 因此易于沉积锂。

公开(公告)号：US20220068977A1

公开(公告)日：2022-03-03

申请号：US17512855

申请日：2021-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Tatsuya TAKAHASHI

IPC: H01L27/12 ,  H01L29/45 ,  G02F1/1368 ,  H01L29/786

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

公开(公告)号：US20200058682A1

公开(公告)日：2020-02-20

申请号：US16662394

申请日：2019-10-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Tatsuya TAKAHASHI

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  H01L29/45

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

公开(公告)号：US20140293183A1

公开(公告)日：2014-10-02

申请号：US14244440

申请日：2014-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Tatsuya TAKAHASHI

IPC: H01L27/12 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/78645

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Abstract translation: 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

公开(公告)号：US20140091303A1

公开(公告)日：2014-04-03

申请号：US14097749

申请日：2013-12-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Miyuki HOSOBA ,  Tatsuya TAKAHASHI

IPC: H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/32 ,  H01L27/3248 ,  H01L29/45

Abstract: The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material.

Abstract translation: 半导体器件包括驱动电路，该驱动电路包括第一薄膜晶体管和在一个衬底上包括第二薄膜晶体管的像素。 第一薄膜晶体管包括第一栅极电极层，栅极绝缘层，第一氧化物半导体层，第一氧化物导电层，第二氧化物导电层，与第一氧化物半导体的一部分接触的氧化物绝缘层 并且与第一和第二氧化物导电层的周边和侧表面接触，第一源极电极层和第一漏极电极层。 第二薄膜晶体管包括使用透光材料形成的第二栅极电极层，第二氧化物半导体层以及第二源电极层和第二漏极电极层。