公开(公告)号：US20180323226A1

公开(公告)日：2018-11-08

申请号：US15922514

申请日：2018-03-15

申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION ,  SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION

发明人： DEKUI QI ,  Fucheng Chen

IPC分类号： H01L27/146 ,  H01L21/28 ,  H01L21/768 ,  H01L21/3213

CPC分类号： H01L27/1464 ,  H01L21/28123 ,  H01L21/3213 ,  H01L21/76834 ,  H01L21/76849 ,  H01L27/14603 ,  H01L27/14645

摘要： A semiconductor device includes a device substrate having a dielectric layer and a metal wire in the dielectric layer, a first opening on the metal wire and having a bottom at a depth the same as an upper surface of the metal wire, a first insulation layer including a first color filter material on sidewalls of the first opening, a second opening disposed at opposite ends of the semiconductor device and having a bottom at a depth the same as the depth of the bottom of the first opening, and a second insulation layer including a second color filter material on sidewalls of the second opening. The first opening is for leading out the metal wire to a pad. The second opening is disposed along scribe lines. The semiconductor device simplifies the process of drawing out and isolating the pads and satisfies technical requirements of a back seal ring.