公开(公告)号：US20210359188A1

公开(公告)日：2021-11-18

申请号：US17389025

申请日：2021-07-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

IPC: H01L33/62 ,  H01L33/46 ,  H01L27/15 ,  H01L33/10

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

公开(公告)号：US20240313184A1

公开(公告)日：2024-09-19

申请号：US18671619

申请日：2024-05-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/10 ,  H01L33/46

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

公开(公告)号：US20200212263A1

公开(公告)日：2020-07-02

申请号：US16354815

申请日：2019-03-15

Applicant: Seoul Viosys Co., Ltd.

Inventor： Min Chan HEO ,  Kyoung Wan Kim ,  Ye Seul Kim ,  Yong Woo Ryu

IPC: H01L33/46 ,  H01L33/42

Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.