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    LIGHT EMITTING DIODE
    1.
    发明申请
    LIGHT EMITTING DIODE 有权

    公开(公告)号：US20210359188A1

    公开(公告)日：2021-11-18

    申请号：US17389025

    申请日：2021-07-29

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

    IPC: H01L33/62 ,  H01L33/46 ,  H01L27/15 ,  H01L33/10

    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
    发光二极管及其制造方法

    公开(公告)号：US20150311398A1

    公开(公告)日：2015-10-29

    申请号：US14791824

    申请日：2015-07-06

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Seom Geun LEE ,  Jong Kyu KIM ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Mae Yi KIM

    IPC: H01L33/42 ,  H01L33/46 ,  H01L33/08 ,  H01L33/62

    CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: An exemplary embodiment discloses a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other. The light emitting diode also includes a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell. The light emitting diode also includes a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and a first side of insulation layer are connected to each other.

    Abstract translation: 示例性实施例公开了一种包括第一发光单元和设置在基板上的第二发光单元的发光二极管，第一发光单元和第二发光单元彼此间隔开。 发光二极管还包括设置在第一发光单元上的第一氧化锌（ZnO）层，第一ZnO层电连接到第一发光单元。 发光二极管还包括设置在第一发光单元的一部分和第一ZnO层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在互连之间的绝缘层 和第一发光单元的侧面。 电流阻挡层和绝缘层的第一侧彼此连接。

    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
    发光二极管及其制造方法

    公开(公告)号：US20140175465A1

    公开(公告)日：2014-06-26

    申请号：US14135925

    申请日：2013-12-20

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Seom Geun LEE ,  Jong Kyu KIM ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Mae Yi KIM

    IPC: H01L33/62 ,  H01L27/15

    CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other.

    Abstract translation: 本发明的示例性实施例提供一种发光二极管，其包括第一发光单元和布置在基板上并彼此间隔开的第二发光单元，第一透明电极层，设置在第一发光单元上并电连接到 第一发光单元，设置在第一发光单元的一部分和第一透明电极层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在第一发光单元之间的绝缘层 互连和第一发光单元的侧表面。 电流阻挡层和绝缘层彼此连接。

    LIGHT EMITTING DIODE CHIP
    4.
    发明申请
    LIGHT EMITTING DIODE CHIP 审中-公开

    公开(公告)号：US20200220049A1

    公开(公告)日：2020-07-09

    申请号：US16823734

    申请日：2020-03-19

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Jae Kwon KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

    IPC: H01L33/46 ,  H01L33/10 ,  H01L33/40 ,  H01L33/48 ,  H01L23/00

    Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE
    7.
    发明申请
    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE 审中-公开

    公开(公告)号：US20200035751A1

    公开(公告)日：2020-01-30

    申请号：US16594239

    申请日：2019-10-07

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

    IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

    LIGHT EMITTING DIODE
    10.
    发明公开
    LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：US20240313184A1

    公开(公告)日：2024-09-19

    申请号：US18671619

    申请日：2024-05-22

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

    IPC: H01L33/62 ,  H01L27/15 ,  H01L33/10 ,  H01L33/46

    CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/10 ,  H01L33/46

    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

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