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    LIGHT EMITTING ELEMENT INCLUDING METAL BULK
    1.
    发明申请
    LIGHT EMITTING ELEMENT INCLUDING METAL BULK 审中-公开

    公开(公告)号：US20190148597A1

    公开(公告)日：2019-05-16

    申请号：US16225269

    申请日：2018-12-19

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Hyeon CHAE ,  Chang Yeon KIM ,  Joon Sup LEE ,  Dae Woong SUH ,  Won Young ROH ,  Ju Yong PARK ,  Seung Hyun KIM

    IPC: H01L33/38 ,  H01L27/15

    Abstract: A light emitting element according to an embodiment of the present invention comprises a first conductive-type semiconductor layer including a contact region on the lower surface thereof, a light emitting structure which includes a mesa including a second conductive-type semiconductor layer and an active layer, a second electrode, a first insulation layer, an electrode cover layer, a first electrode, a second insulation layer, and a support structure. In addition, the mesa may include a body part and a plurality of protrusion parts protruding from the body part, the contact region may be disposed between the protrusion parts, and a part of the contact region may overlap with a second metal bulk in the vertical direction. Accordingly, current spreading efficiency can be improved, and thus luminance efficiency can be more improved.

    LIGHT EMITTING DIODE
    2.
    发明申请
    LIGHT EMITTING DIODE 有权

    公开(公告)号：US20210359188A1

    公开(公告)日：2021-11-18

    申请号：US17389025

    申请日：2021-07-29

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

    IPC: H01L33/62 ,  H01L33/46 ,  H01L27/15 ,  H01L33/10

    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
    3.
    发明申请
    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME 审中-公开

    公开(公告)号：US20200176636A1

    公开(公告)日：2020-06-04

    申请号：US16782969

    申请日：2020-02-05

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Daewoong SUH ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Se Hee OH ,  Hyun A KIM

    IPC: H01L33/38

    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

    LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE
    4.
    发明申请
    LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE 审中-公开
    发光二极管和发光二极管封装

    公开(公告)号：US20160343911A1

    公开(公告)日：2016-11-24

    申请号：US15226304

    申请日：2016-08-02

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Daewoong SUH ,  Dae Sung CHO ,  Joon Sup LEE ,  Kyu Ho LEE ,  Chi Hyun IN

    IPC: H01L33/40 ,  H01L33/46 ,  H01L33/42 ,  H01L33/20 ,  H01L33/32 ,  H01L33/12

    CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

    Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.

    Abstract translation: 一种发光二极管，包括第一导电类型半导体层，设置在第一导电类型半导体层上的台面，包括有源层和第二导电类型半导体层的台面，设置在台面上并被配置为欧姆的反射电极 与第二导电型半导体层接触，设置在台面和反射电极上的电流扩散层，电流扩展层包括构造成与第一导电类型半导体层的上表面欧姆接触的第一部分， 与设置在第一和第二n接触区域之间的台面的第二n接触区域间隔开的第一n接触区域以及包括在第一和第二n-接触区域之间暴露反射电极的第一开口的绝缘层 。 第一和第二n接触区域具有暴露第一导电类型半导体层的第二开口。

    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
    5.
    发明申请
    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME 有权

    公开(公告)号：US20210005785A1

    公开(公告)日：2021-01-07

    申请号：US17024167

    申请日：2020-09-17

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Daewoong SUH ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Se Hee OH ,  Hyun A KIM

    IPC: H01L33/38

    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

    LIGHT EMITTING DIODE CHIP
    6.
    发明申请
    LIGHT EMITTING DIODE CHIP 审中-公开

    公开(公告)号：US20200220049A1

    公开(公告)日：2020-07-09

    申请号：US16823734

    申请日：2020-03-19

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Jae Kwon KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

    IPC: H01L33/46 ,  H01L33/10 ,  H01L33/40 ,  H01L33/48 ,  H01L23/00

    Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE
    8.
    发明申请
    LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DIODE 审中-公开

    公开(公告)号：US20200035751A1

    公开(公告)日：2020-01-30

    申请号：US16594239

    申请日：2019-10-07

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

    IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

    Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

    HIGHLY RELIABLE LIGHT EMITTING DIODE
    9.
    发明申请
    HIGHLY RELIABLE LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：US20190296204A1

    公开(公告)日：2019-09-26

    申请号：US16464679

    申请日：2017-10-11

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Hyun A KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Hyoung Jin LIM

    IPC: H01L33/64 ,  H01L33/40 ,  H01L33/20 ,  H01L33/62 ,  H01L27/15 ,  H01L33/10

    Abstract: A light emitting diode including a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, an ohmic reflection layer disposed on the mesa to form an ohmic contact with the second semiconductor layer, a lower insulation layer covering the mesa and the ohmic reflection layer and partially exposing the first semiconductor layer and the ohmic reflection layer, a first pad metal layer disposed on the lower insulation layer and electrically connected to the first semiconductor layer, a metal reflection layer disposed on the lower insulation layer and laterally spaced apart from the first pad metal layer, and an upper insulation layer covering the first pad metal layer and the metal reflection layer, and having a first opening exposing the first pad metal layer, in which at least a portion of the metal reflection layer covers a side surface of the mesa.

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