公开(公告)号：US20150125981A1

公开(公告)日：2015-05-07

申请号：US14377101

申请日：2013-02-06

Applicant: Seoul Viosys Co., Ltd. ,  University Industry Liaison Office of Chonnam National University

Inventor： Sang Wan Ryu ,  Jin Ho Kang

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L21/76259 ,  H01L33/0075 ,  H01L33/32

Abstract: The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off. The method for separating the semiconductor devices using a nanoporous structure includes the steps of: growing a first n-type nitride layer on the substrate; growing a dielectric layer on the first n-type nitride layer; forming a nanoporous structure in the first n-type nitride layer by means of electrochemical etching; re-growing a second n-type nitride layer on the first n-type nitride layer so as to form a second n-type nitride layer containing the dielectric layer; growing a multi-quantum well structure and a p-type nitride layer on the second n-type nitride layer for bonding with a conductive substrate; and separating the semiconductor devices from the substrate through selective HF etching of the dielectric layer.

Abstract translation: 本发明涉及使用纳米多孔结构从基板分离半导体器件的方法，其中在不存在表面金属层的情况下进行电化学蚀刻，然后沉积表面金属层，然后转移GaN薄膜 通过晶片接合和剥离在金属晶片上。 使用纳米多孔结构分离半导体器件的方法包括以下步骤：在衬底上生长第一n型氮化物层; 在第一n型氮化物层上生长电介质层; 通过电化学蚀刻在第一n型氮化物层中形成纳米多孔结构; 在第一n型氮化物层上重新生长第二n型氮化物层，以形成包含电介质层的第二n型氮化物层; 在第二n型氮化物层上生长多个量子阱结构和p型氮化物层，用于与导电基板接合; 以及通过所述电介质层的选择性HF蚀刻从所述衬底分离所述半导体器件。

公开(公告)号：US09373496B2

公开(公告)日：2016-06-21

申请号：US14085876

申请日：2013-11-21

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Joo Won Choi ,  Chang Yeon Kim ,  Jeong Hoon Heo ,  Young Wug Kim ,  Su Yeon Hong ,  Sang Wan Ryu

IPC: H01L21/302 ,  H01L21/02 ,  H01L29/20 ,  H01L33/00

CPC classification number: H01L21/02032 ,  H01L21/02013 ,  H01L21/02019 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Abstract translation: 本发明的示例性实施方案提供了基材回收方法和再循环基材。 该方法包括将具有第一表面的衬底与外延层分离，使用电化学蚀刻来执行第一表面的第一蚀刻，以及在第一蚀刻之后，使用化学蚀刻，干蚀刻或 在第一次蚀刻之后进行第一表面的化学机械抛光。

公开(公告)号：US09356187B2

公开(公告)日：2016-05-31

申请号：US14377101

申请日：2013-02-06

Applicant: Seoul Viosys Co., Ltd. ,  University Industry Liaison Office of Chonnam National University

Inventor： Sang Wan Ryu ,  Jin Ho Kang

IPC: H01L33/00 ,  H01L21/762 ,  H01L33/32

CPC classification number: H01L33/0079 ,  H01L21/76259 ,  H01L33/0075 ,  H01L33/32

Abstract: The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off. The method for separating the semiconductor devices using a nanoporous structure includes the steps of: growing a first n-type nitride layer on the substrate; growing a dielectric layer on the first n-type nitride layer; forming a nanoporous structure in the first n-type nitride layer by means of electrochemical etching; re-growing a second n-type nitride layer on the first n-type nitride layer so as to form a second n-type nitride layer containing the dielectric layer; growing a multi-quantum well structure and a p-type nitride layer on the second n-type nitride layer for bonding with a conductive substrate; and separating the semiconductor devices from the substrate through selective HF etching of the dielectric layer.

Abstract translation: 本发明涉及使用纳米多孔结构从基板分离半导体器件的方法，其中在不存在表面金属层的情况下进行电化学蚀刻，然后沉积表面金属层，然后转移GaN薄膜 通过晶片接合和剥离在金属晶片上。 使用纳米多孔结构分离半导体器件的方法包括以下步骤：在衬底上生长第一n型氮化物层; 在第一n型氮化物层上生长电介质层; 通过电化学蚀刻在第一n型氮化物层中形成纳米多孔结构; 在第一n型氮化物层上重新生长第二n型氮化物层，以形成包含电介质层的第二n型氮化物层; 在第二n型氮化物层上生长多个量子阱结构和p型氮化物层，用于与导电基板接合; 以及通过所述电介质层的选择性HF蚀刻从所述衬底分离所述半导体器件。