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公开(公告)号：US09653018B2
公开(公告)日：2017-05-16
申请号：US14715341
申请日：2015-05-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Yeon Kim , Tae Hyuk Im , Young Wug Kim
CPC classification number: G09G3/32 , H05B33/0815 , Y02B20/346
Abstract: A light-emitting diode driving device enabling an excellent heat-dissipation function and high-efficient driving is disclosed. The disclosed LED driving device comprises: a power source unit providing an alternate current voltage; a rectification unit communicatively coupled to the power source and rectifying the alternate current voltage; a driving signal generation unit configured to receive the rectified voltage from the rectification unit and generate a primary driving signal by using the rectified voltage; and an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation unit configured to receive the primary driving signal and generating a secondary pulse driving signal by modulating the primary driving signal, and LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal.
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公开(公告)号：US20140367722A1
公开(公告)日：2014-12-18
申请号：US14368268
申请日：2012-12-21
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.
Abstract translation: 公开了一种发光二极管及其制造方法。 根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。 光散射图可以提高光提取效率。
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公开(公告)号：US09508909B2
公开(公告)日：2016-11-29
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L27/15 , H01L33/60 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/44 , H01L33/06 , H01L33/00
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括接触n型化合物半导体层的Ni层和设置在Ni层上的两个Au层。
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4.发明授权Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods 有权分离生长衬底的方法，发光二极管的方法和使用方法制造的发光二极管公开(公告)号：US09450141B2
公开(公告)日：2016-09-20
申请号：US14436068
申请日：2013-08-01
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Young Wug Kim , Su Jin Shin , Su Youn Hong
CPC classification number: H01L33/0079 , H01L33/0075 , H01L33/0095 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/46 , H01L2933/0025
Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.
Abstract translation: 公开了用于分离生长衬底的方法，制造发光二极管的方法和发光二极管。 根据一个实施方案的分离生长衬底的方法包括：制备生长衬底; 在生长衬底上形成牺牲层和掩模图案; 通过使用电化学蚀刻（ECE）蚀刻牺牲层; 覆盖掩模图案，并且通过元件分离区域形成彼此分离的多个氮化物半导体堆叠结构; 将支撑基板附接到所述多个半导体堆叠结构，其中所述支撑基板具有连接到所述元件分离区域的多个通孔; 以及将生长衬底与氮化物半导体堆叠结构分离。
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公开(公告)号：US20160111613A1
公开(公告)日：2016-04-21
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括与n型化合物半导体层接触的Ni层和设置在Ni层上的2层Au层。
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Patent Agency Ranking
公开(公告)号：US09991424B2
公开(公告)日：2018-06-05
申请号：US15355219
申请日：2016-11-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L31/12 , H01L33/44 , H01L33/22 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/06 , H01L33/60 , H01L33/40
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
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公开(公告)号：US09362449B2
公开(公告)日：2016-06-07
申请号：US14464179
申请日：2014-08-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Yeon Kim , Dae Sung Cho , Ki Bum Nam , Young Wug Kim , Jong Kyun You , Kenji Shimoyama , Takahide Joichi , Kaori Kurihara
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/0079 , H01L33/22 , H01L33/387 , H01L33/44
Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.
Abstract translation: 本文公开了一种高效率发光二极管及其制造方法。 发光二极管包括设置在支撑基板上并包括氮化镓基p型半导体层，氮化镓基有源层和氮化镓基n型半导体层的半导体堆叠结构; 以及设置在所述支撑基板和所述半导体堆叠结构之间的反射层，其中所述半导体堆叠结构包括形成在所述突起的顶表面上的具有截头圆锥形状的多个突起和细锥。 通过这种构造，可以提高具有低位错密度的半导体层叠结构的光提取效率。
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公开(公告)号：US09018027B2
公开(公告)日：2015-04-28
申请号：US13950958
申请日：2013-07-25
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Young Wug Kim
CPC classification number: H01L21/0254 , H01L33/0079 , H01L33/32
Abstract: A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.
Abstract translation: 一种制造基于氮化镓（GaN）的半导体器件的方法。 该方法包括制备具有下表面和上表面的GaN衬底; 在GaN衬底的上表面上生长GaN基半导体层以形成半导体堆叠; 在所述半导体堆叠上形成支撑衬底; 以及将GaN衬底与半导体堆叠分离。 GaN衬底的分离包括从GaN衬底的下表面照射激光。 激光穿过GaN衬底的下表面并在由GaN衬底和半导体堆叠构成的结构内形成激光吸收区。
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公开(公告)号：US20170069799A1
公开(公告)日：2017-03-09
申请号：US15355219
申请日：2016-11-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk IM , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
Abstract translation: 一种发光二极管，包括支撑衬底，设置在支撑衬底上并包括p型化合物半导体层的半导体堆叠，有源层和n型化合物半导体层，设置在支撑衬底之间的反射金属层 所述反射金属层与所述半导体叠层的p型化合物半导体层欧姆接触，并且包括暴露所述半导体叠层的一部分的凹槽，设置在所述支撑基板和所述半导体叠层之间的绝缘层，以及 设置在所述槽中，以及第一电极，所述第一电极包括第一电极焊盘和第一电极延伸部，并且与所述第一电极延伸部连接到所述第一电极焊盘的所述半导体堆叠的所述n型化合物半导体层接触， 电极延伸沿着发光二极管的外边界形成。
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公开(公告)号：US09373496B2
公开(公告)日：2016-06-21
申请号：US14085876
申请日：2013-11-21
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Joo Won Choi , Chang Yeon Kim , Jeong Hoon Heo , Young Wug Kim , Su Yeon Hong , Sang Wan Ryu
IPC: H01L21/302 , H01L21/02 , H01L29/20 , H01L33/00
CPC classification number: H01L21/02032 , H01L21/02013 , H01L21/02019 , H01L29/2003 , H01L33/007 , H01L33/0079
Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.
Abstract translation: 本发明的示例性实施方案提供了基材回收方法和再循环基材。 该方法包括将具有第一表面的衬底与外延层分离，使用电化学蚀刻来执行第一表面的第一蚀刻，以及在第一蚀刻之后，使用化学蚀刻，干蚀刻或 在第一次蚀刻之后进行第一表面的化学机械抛光。
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