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    SOLID-STATE IMAGING ELEMENT AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SOLID-STATE IMAGING ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
    固态成像元件及其制造方法

    公开(公告)号：US20150014749A1

    公开(公告)日：2015-01-15

    申请号：US14379061

    申请日：2013-02-21

    申请人： Sharp Kabushiki Kaisha

    发明人： Takeo Ushinaga

    IPC分类号： H01L27/148 ,  H01L31/0352

    CPC分类号： H01L27/14812 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14616 ,  H01L31/03529

    摘要： Provided are a solid-state imaging element which can be simply manufactured and can control movement of electric charges in an accumulation region with a high degree of accuracy, and a method of manufacturing the same. A solid-state imaging element (1a) includes a substrate (11) having a first conductivity type; an accumulation region (12) having a second conductivity type and provided in the substrate (11); a read-out region (13) for receiving the transferred electric charges accumulated in the accumulation region (12); and a transfer section (14) for transferring the electric charges from the accumulation region (12) to the read-out region (13). An impurity concentration modulation region 121 having a locally high concentration of an impurity having the second conductivity type, or having a locally low concentration of an impurity having the first conductivity type is formed in a part of the accumulation region (12). An area of the impurity concentration modulation region (121) per unit distance with respect to the transfer section (14), or a density of the discretely provided impurity concentration modulation region (121) increases with decreasing distance to the transfer section (14).

    摘要翻译： 提供一种可以简单地制造并可以以高精度控制积聚区域中的电荷的移动的固态成像元件及其制造方法。 固态成像元件（1a）包括具有第一导电类型的衬底（11）; 具有第二导电类型并设置在基板（11）中的积聚区域（12）; 读出区域（13），用于接收累积在累积区域（12）中的转移电荷; 以及用于将电荷从积聚区域（12）传送到读出区域（13）的转印部分（14）。 在积聚区域（12）的一部分中形成具有局部高浓度的具有第二导电类型的杂质或具有局部低浓度的具有第一导电类型的杂质的杂质浓度调制区域121。 相对于转印部分（14）每单位距离的杂质浓度调制区域（121）的面积或离散提供的杂质浓度调制区域（121）的密度随着与转印部分（14）的距离的减小而增加。

    IMAGING DEVICE AND ELECTRONIC INFORMATION INSTRUMENT
    3.
    发明申请
    IMAGING DEVICE AND ELECTRONIC INFORMATION INSTRUMENT 有权
    成像设备和电子信息仪器

    公开(公告)号：US20140368618A1

    公开(公告)日：2014-12-18

    申请号：US14368120

    申请日：2012-11-22

    申请人： Sharp Kabushiki Kaisha

    发明人： Takeo Ushinaga ,  Shinji Hattori

    IPC分类号： H04N13/02

    CPC分类号： H04N13/207 ,  G03B35/08 ,  H01L27/14607 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H04N5/3696 ,  H04N13/218 ,  H04N13/339

    摘要： A means for correcting tilts and positional deviations from a stereo image is rendered unnecessary. The present invention has a solid-state imaging element 2 on which a plurality of light receiving sections for photoelectrically converting and imaging an image light from a subject are arranged in a matrix pattern and a lens means 3 with a single focal point on an imaging surface of the solid-state imaging element 2. The present invention is configured to simultaneously or chronologically expose and image each imaging light from a subject entering different positions of the lens means 3 as a plurality of images in a plurality of imaging regions for each predetermined imaging regions of the solid-state imaging element 2.

    摘要翻译： 不需要用于校正来自立体图像的倾斜和位置偏差的装置。 本发明具有固体成像元件2，在该固体摄像元件2上，将用于对来自被摄体的图像光进行光电转换和成像的多个光接收部分布置成矩阵图案，并且将具有单个焦点的透镜装置3布置在成像表面上 本发明被配置为同时或按时间顺序地将来自被摄体的每个成像光从每个预定成像的多个成像区域中进入作为多个图像的透镜装置3的不同位置的图像 固体摄像元件2的区域。

    Analog-to-digital converter and solid-state image sensor
    5.
    发明授权
    Analog-to-digital converter and solid-state image sensor 有权

    公开(公告)号：US10708532B2

    公开(公告)日：2020-07-07

    申请号：US16534835

    申请日：2019-08-07

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Takeo Ushinaga ,  Yoshinao Morikawa

    IPC分类号： H04N5/374 ,  H03M1/34 ,  H04N5/3745

    摘要： [Object] To prevent code skipping in decoding.[Solution] Included are a low-order bit latch unit (63) that latches digital code data as a low-order bit, a high-order bit counter unit (64) that counts one or both of edges of a control signal corresponding to a reference clock, and stops counting of high-order bits, triggered by output of a comparator (62) being inverted, a low-order bit decoding signal latch unit (65) that latches a low-order bit decoding signal, and a signal processing unit (8).

    Solid-state imaging element and method of manufacturing the same
    6.
    发明授权
    Solid-state imaging element and method of manufacturing the same 有权

    公开(公告)号：US10186547B2

    公开(公告)日：2019-01-22

    申请号：US14379061

    申请日：2013-02-21

    申请人： Sharp Kabushiki Kaisha

    发明人： Takeo Ushinaga

    IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/0352

    摘要： Provided are a solid-state imaging element which can be simply manufactured and can control movement of electric charges in an accumulation region with a high degree of accuracy, and a method of manufacturing the same. A solid-state imaging element (1a) includes a substrate (11) having a first conductivity type; an accumulation region (12) having a second conductivity type and provided in the substrate (11); a read-out region (13) for receiving the transferred electric charges accumulated in the accumulation region (12); and a transfer section (14) for transferring the electric charges from the accumulation region (12) to the read-out region (13). An impurity concentration modulation region 121 having a locally high concentration of an impurity having the second conductivity type, or having a locally low concentration of an impurity having the first conductivity type is formed in a part of the accumulation region (12). An area of the impurity concentration modulation region (121) per unit distance with respect to the transfer section (14), or a density of the discretely provided impurity concentration modulation region (121) increases with decreasing distance to the transfer section (14).