公开(公告)号：US09437435B2

公开(公告)日：2016-09-06

申请号：US14415607

申请日：2014-11-14

Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD

Inventor： Xiaoxiao Wang ,  Hsiang Chih Hsiao ,  Peng Du ,  Chang-I Su ,  Hongyuan Xu ,  Bo Sun

IPC: H01L21/28 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L21/28114 ,  H01L21/28035 ,  H01L27/1222 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78672

Abstract: The present invention proposes a low temperature poly-silicon thin-film transistor having a dual-gate structure and a method for forming the low temperature poly-silicon thin-film transistor. The low temperature poly-silicon thin-film transistor includes: a substrate, one or more patterned amorphous silicon (a-Si) layers, disposed in a barrier layer on the substrate, for forming a bottom gate, an NMOS disposed on the barrier layer, and a PMOS disposed on the barrier layer. The NMOS comprises a patterned gate electrode (GE) layer as a top gate, and the patterned GE layer and the bottom gate formed by the one or more patterned a-Si layers form a dual-gate structure. The present invention proposes a low temperature poly-silicon thin-film transistor with a more stabilized I-V characteristic, better driving ability, low power consumption, and higher production yield.

Abstract translation: 本发明提出了一种具有双栅极结构的低温多晶硅薄膜晶体管和形成低温多晶硅薄膜晶体管的方法。 低温多晶硅薄膜晶体管包括：基板，设置在基板上的阻挡层中的一个或多个图案化非晶硅（a-Si）层，用于形成底栅，设置在势垒层上的NMOS 和设置在阻挡层上的PMOS。 NMOS包括作为顶栅的图案化栅电极（GE）层，并且由一个或多个图案化a-Si层形成的图案化GE层和底栅形成双栅结构。 本发明提出了具有更稳定的I-V特性，更好的驱动能力，低功耗和更高的产量的低温多晶硅薄膜晶体管。

公开(公告)号：US20150332885A1

公开(公告)日：2015-11-19

申请号：US14382729

申请日：2014-05-19

Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD.

Inventor： Chang-I Su ,  Yangling Cheng

IPC: H01J9/20

CPC classification number: H01J9/20 ,  G02F1/133305 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: A manufacturing method of a flexible display is provided, which comprises steps of forming an silicon layer on a rigid substrate, forming a frame-type silicon layer from the silicon layer, attaching a flexible substrate onto the surface of the rigid substrate on which the frame-type amorphous silicon layer is formed, forming a display film on the flexible substrate, and dehydrogenating the frame-type silicon layer after the formation of the display film is complete, so that the flexible substrate is separated from the frame-type silicon layer for obtaining the flexible display. The manufacturing method of the flexible display prevents the problem of low yield rate caused by the damage to the plastic substrate in the separation process.

Abstract translation: 提供了一种柔性显示器的制造方法，其包括在刚性基板上形成硅层的步骤，从硅层形成框型硅层，将柔性基板附着到刚性基板的表面上，框架 形成非晶硅层，在柔性基板上形成显示膜，在形成显示膜之后使框架型硅层脱氢，使柔性基板与框型硅层分离， 获得灵活的显示。 柔性显示器的制造方法防止了在分离过程中由塑料基板损坏引起的低产率问题。

公开(公告)号：US09287077B2

公开(公告)日：2016-03-15

申请号：US14382729

申请日：2014-05-19

Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD

Inventor： Chang-I Su ,  Yangling Cheng

IPC: H01J9/00 ,  H01J9/20

CPC classification number: H01J9/20 ,  G02F1/133305 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: A manufacturing method of a flexible display is provided, which comprises steps of forming an silicon layer on a rigid substrate, forming a frame-type silicon layer from the silicon layer, attaching a flexible substrate onto the surface of the rigid substrate on which the frame-type amorphous silicon layer is formed, forming a display film on the flexible substrate, and dehydrogenating the frame-type silicon layer after the formation of the display film is complete, so that the flexible substrate is separated from the frame-type silicon layer for obtaining the flexible display. The manufacturing method of the flexible display prevents the problem of low yield rate caused by the damage to the plastic substrate in the separation process.

Abstract translation: 提供了一种柔性显示器的制造方法，其包括在刚性基板上形成硅层的步骤，从硅层形成框型硅层，将柔性基板附着到刚性基板的表面上，框架 形成非晶硅层，在柔性基板上形成显示膜，在形成显示膜之后使框架型硅层脱氢，使柔性基板与框型硅层分离， 获得灵活的显示。 柔性显示器的制造方法防止了在分离过程中由塑料基板损坏引起的低产率问题。