公开(公告)号：US11322384B2

公开(公告)日：2022-05-03

申请号：US17034173

申请日：2020-09-28

申请人： SHIN-ETSU ENGINEERING CO., LTD. ,  SHIBAURA MECHATRONICS CORPORATION

发明人： Shunya Kubota ,  Emi Matsui ,  Katsuhiro Yamazaki ,  Yoshikazu Ohtani ,  Kyouhei Tomioka

IPC分类号： H01L21/67 ,  H01L21/683

摘要： According to one embodiment, a substrate processing apparatus and a substrate processing method that can improve the quality of substrates are provided. The substrate processing apparatus according to one embodiment includes: a table 20 configured to support a processing target W including a substrate W1, a ring W2 surrounding a surrounding of the substrate W1, and a dicing tape W3 adhered to a lower surface of the substrate W1 and a lower surface of the ring W2, and a liquid supplier 50 configured to eject a liquid which does not mix with a processing liquid for processing the substrate W1 and which has a specific gravity heavier than the processing liquid to one of an upper surface of the ring W2 of the processing target W supported by the table 20 rotating by the rotation mechanism 30, an outer circumference end portion of the substrate W1 of the processing target W supported by the table 20 rotating by the rotation mechanism 30, and between the substrate W1 and the ring W2 of the processing target W supported by the table 20 rotating by the rotation mechanism in accordance with a rotation number of the table 20 to supply the liquid between the substrate W1 and the ring W2 of the processing target W.

公开(公告)号：US20130260292A1

公开(公告)日：2013-10-03

申请号：US13850515

申请日：2013-03-26

申请人： SHIBAURA MECHATRONICS CORPORATION

发明人： Katsuhiro Yamazaki ,  Kensuke Demura

IPC分类号： G03F1/24

CPC分类号： G03F7/70033 ,  G03F1/24

摘要： According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

公开(公告)号：US10573540B2

公开(公告)日：2020-02-25

申请号：US15468577

申请日：2017-03-24

申请人： SHIBAURA MECHATRONICS CORPORATION

发明人： Nobuo Kobayashi ,  Takeki Kogawa ,  Katsuhiro Yamazaki ,  Yuki Saito

IPC分类号： H01L21/67 ,  H01L21/306

摘要： According to one embodiment, a substrate processing apparatus includes a tank that stores a treatment liquid; a liquid level pipe connected to the tank such that the treatment liquid stored in the tank flows therein, and configured such that the liquid level of the treatment liquid therein moves according to increase and decrease of the treatment liquid in the tank; a liquid level sensor that detects the liquid level in the liquid level pipe; an air supply pipe for supplying a gas to a piping space above the liquid level in the liquid level pipe; and a controller that determines whether there is erroneous detection of the liquid level sensor based on a detection result obtained by the liquid level sensor in response to the movement of the liquid level in the liquid level pipe caused by supply of the gas to the piping space from the air supply pipe.

公开(公告)号：US08999612B2

公开(公告)日：2015-04-07

申请号：US13850515

申请日：2013-03-26

申请人： Shibaura Mechatronics Corporation

发明人： Katsuhiro Yamazaki ,  Kensuke Demura

IPC分类号： G03F1/24 ,  G03F1/22

CPC分类号： G03F7/70033 ,  G03F1/24

摘要： According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

摘要翻译： 根据一个实施例，一种用于制造反射掩模的方法包括：在基板的主表面上形成反射层; 在反射层上形成含有钌的覆盖层; 在覆盖层上形成吸收层; 在吸收层中形成图案区域; 去除用于形成图案区域的第一抗蚀剂掩模; 以及在吸收层，封盖层和反射层中形成围绕图案区域的遮光区域。 去除形成图案区域中使用的第一抗蚀剂掩模包括：使用氨气和氮气的混合气体或仅仅氨气进行干灰化处理。

公开(公告)号：US09513557B2

公开(公告)日：2016-12-06

申请号：US14635183

申请日：2015-03-02

申请人： Shibaura Mechatronics Corporation

发明人： Katsuhiro Yamazaki ,  Kensuke Demura

IPC分类号： G03F7/20 ,  G03F1/24

CPC分类号： G03F7/70033 ,  G03F1/24

摘要： According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

公开(公告)号：US20150177624A1

公开(公告)日：2015-06-25

申请号：US14635183

申请日：2015-03-02

申请人： Shibaura Mechatronics Corporation

发明人： Katsuhiro Yamazaki ,  Kensuke Demura

IPC分类号： G03F7/20

CPC分类号： G03F7/70033 ,  G03F1/24

摘要： According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

摘要翻译： 根据一个实施例，一种用于制造反射掩模的方法包括：在基板的主表面上形成反射层; 在反射层上形成含有钌的覆盖层; 在覆盖层上形成吸收层; 在吸收层中形成图案区域; 去除用于形成图案区域的第一抗蚀剂掩模; 以及在吸收层，封盖层和反射层中形成围绕图案区域的遮光区域。 去除形成图案区域中使用的第一抗蚀剂掩模包括：使用氨气和氮气的混合气体或仅仅氨气进行干灰化处理。