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公开(公告)号：US09865497B2
公开(公告)日：2018-01-09
申请号：US14916289
申请日：2014-08-22
发明人： Isao Yokokawa , Hiroji Aga , Hiroshi Fujisawa
IPC分类号： H01L21/762 , H01L21/02 , H01L21/306
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/02057 , H01L21/30604
摘要： A method for manufacturing bonded wafer including: producing bonded wafer having thin-film on its base wafer by an ion implantation delamination method, and reducing film thickness of the thin-film, wherein the step of reducing the film thickness includes a stage of reducing the film thickness by sacrificial oxidation treatment or vapor phase etching, wherein the method for manufacturing bonded wafer further includes a cleaning step of cleaning the bonded wafer exposing the delamination surface just before the step of reducing the film thickness, wherein the cleaning step includes a stage of performing a wet cleaning by successively dipping the bonded wafer to plural of cleaning baths, and wherein the wet cleaning is performed without applying ultrasonic in each of the cleaning baths in the wet cleaning. The method enables to clean bonded wafer exposing delamination surface remaining damage of ion implantation using a cleaning line in a strict control level.
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公开(公告)号：US09773694B2
公开(公告)日：2017-09-26
申请号：US15120905
申请日：2015-02-12
发明人： Norihiro Kobayashi , Hiroji Aga
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762 , H01L27/12 , H01L21/265 , H01L21/324 , H01L21/02
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/26533 , H01L21/30604 , H01L21/324 , H01L21/3247 , H01L27/12
摘要： A method for manufacturing a bonded wafer, includes: ion-implanting a gas ion such as a hydrogen ion from a surface of a bond wafer, thereby forming an ion-implanted layer; bonding the bond wafer and a base wafer; producing a bonded wafer having a thin-film on the base wafer by delaminating the bond wafer along the ion-implanted layer; and performing an RTA treatment on the bonded wafer in a hydrogen gas-containing atmosphere; wherein a protective film is formed onto the surface of the thin-film in a heat treatment furnace in the course of temperature-falling from the maximum temperature of the RTA treatment before the bonded wafer is taken out from the heat treatment furnace; and then the bonded wafer with the protective film being formed thereon is taken out from the heat treatment furnace, and is then cleaned with a cleaning liquid which can etch the protective film and the thin-film.
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公开(公告)号：US09679800B2
公开(公告)日：2017-06-13
申请号：US14912679
申请日：2014-08-01
发明人： Norihiro Kobayashi , Hiroji Aga
IPC分类号： H01L21/46 , H01L21/762
CPC分类号： H01L21/76254
摘要： Method for manufacturing a bonded wafer, including implanting at least one gas ion into a bond wafer from a bond wafer surface forming an ion implantation layer, bonding the surface from the ion implantation into bond wafer and base wafer surface, and delaminating the bond wafer part along the ion implantation layer by heat treatment forming a bonded wafer having thin-film on the base wafer, wherein heat treatment is at most 400° C. to delaminate bond wafer part along the ion implantation layer, including measuring bond wafer thicknesses and base wafer, selecting a combination of bond and base wafers so difference between both wafers thicknesses is 5 μm or more before bonding the bond and base wafers. Inhibition of film thickness unevenness with marble pattern caused in thin-film when a bonded wafer is manufactured by ion implantation delamination method, and can manufacture a bonded wafer having thin-film with high thickness uniformity.
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公开(公告)号：US09240344B2
公开(公告)日：2016-01-19
申请号：US14360545
申请日：2012-11-13
发明人： Hiroji Aga , Norihiro Kobayashi
IPC分类号： H01L21/762 , H01L21/02 , H01L21/3105 , H01L21/265 , H01L21/687
CPC分类号： H01L21/76254 , H01L21/02112 , H01L21/02318 , H01L21/26506 , H01L21/2658 , H01L21/3105 , H01L21/68764 , H01L21/68771
摘要： A method for manufacturing a SOI wafer, including a step of performing a thickness reducing adjustment to a SOI layer of the SOI wafer by carrying out a sacrificial oxidation to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film, wherein, when the thermal oxidation in the sacrificial oxidation treatment is carried out with the use of a batch processing heat treatment furnace during the rising of a temperature and/or the falling of a temperature, a substantially concentric oxide film thickness distribution is formed on the surface of the SOI layer. The result is a method for manufacturing a SOI wafer that enables manufacturing a SOI wafer that has improved radial film thickness distribution with good productivity by performing the sacrificial oxidation treatment for forming a substantially concentric oxide film and removing the formed thermal oxide film.
摘要翻译： 一种SOI晶片的制造方法，其特征在于，包括对所述SOI晶片的SOI层进行减薄调整的步骤，对所述SOI晶片进行牺牲氧化，对所述SOI层的表面进行热氧化， 热氧化膜，其中，当在温度升高和/或温度下降期间使用间歇式热处理炉进行牺牲氧化处理中的热氧化时，基本上同心的氧化膜厚度分布 形成在SOI层的表面上。 结果是制造SOI晶片的方法，其通过进行用于形成大致同心氧化膜的牺牲氧化处理和去除形成的热氧化膜，能够以良好的生产率制造具有改善的径向膜厚度分布的SOI晶片。
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公开(公告)号：US20150249035A1
公开(公告)日：2015-09-03
申请号：US14428700
申请日：2013-11-07
发明人： Hiroji Aga , Isao Yokokawa , Toru Ishizuka
IPC分类号： H01L21/762 , H01L21/02 , H01L21/265
CPC分类号： H01L21/76254 , H01L21/02032 , H01L21/0223 , H01L21/02255 , H01L21/265 , H01L21/76251 , H01L27/12
摘要： The present invention is a method for manufacturing an SOI wafer, including: implanting one or more gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer composed of a semiconductor single crystal substrate from a surface of the bond wafer to form an ion-implanted layer; bonding the surface from which the ion is implanted into the bond wafer and a surface of a base wafer through an oxide film; and then delaminating the bond wafer at the ion-implanted layer by performing a delamination heat treatment with a heat treatment furnace to form the SOI wafer, wherein after the delamination heat treatment, a temperature of the heat treatment furnace is decreased to 250° C. or less at temperature-decreasing rate of less than 3.0° C./min, and then the SOI wafer and the bond wafer after delamination are taken out from the heat treatment furnace.
摘要翻译： 本发明是一种制造SOI晶片的方法，包括：从接合晶片的表面将从氢离子和稀有气体离子中选出的一种或多种气体离子注入由半导体单晶基板构成的接合晶片，以形成 离子注入层; 将离子注入接合晶片的表面和基底晶片的表面通过氧化膜结合; 然后通过用热处理炉进行分层热处理，在离子注入层剥离接合晶片，以形成SOI晶片，其中在分层热处理之后，将热处理炉的温度降低至250℃ 以下，以小于3.0℃/分钟的降温速度，从分离后的SOI晶片和接合晶片从热处理炉取出。
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公开(公告)号：US20140329372A1
公开(公告)日：2014-11-06
申请号：US14360545
申请日：2012-11-13
发明人： Hiroji Aga , Norihiro Kobayashi
IPC分类号： H01L21/762 , H01L21/02 , H01L21/3105
CPC分类号： H01L21/76254 , H01L21/02112 , H01L21/02318 , H01L21/26506 , H01L21/2658 , H01L21/3105 , H01L21/68764 , H01L21/68771
摘要： A method for manufacturing a SOI wafer, including a step of performing a thickness reducing adjustment to a SOI layer of the SOI wafer by carrying out a sacrificial oxidation to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film, wherein, when the thermal oxidation in the sacrificial oxidation treatment is carried out with the use of a batch processing heat treatment furnace during the rising of a temperature and/or the falling of a temperature, a substantially concentric oxide film thickness distribution is formed on the surface of the SOI layer. The result is a method for manufacturing a SOI wafer that enables manufacturing a SOI wafer that has improved radial film thickness distribution with good productivity by performing the sacrificial oxidation treatment for forming a substantially concentric oxide film and removing the formed thermal oxide film.
摘要翻译： 一种SOI晶片的制造方法，其特征在于，包括对所述SOI晶片的SOI层进行减薄调整的步骤，对所述SOI晶片进行牺牲氧化，对所述SOI层的表面进行热氧化， 热氧化膜，其中，当在温度升高和/或温度下降期间使用间歇式热处理炉进行牺牲氧化处理中的热氧化时，基本上同心的氧化膜厚度分布 形成在SOI层的表面上。 结果是制造SOI晶片的方法，其通过进行用于形成大致同心氧化膜的牺牲氧化处理和去除形成的热氧化膜，能够以良好的生产率制造具有改善的径向膜厚度分布的SOI晶片。
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公开(公告)号：US09378999B2
公开(公告)日：2016-06-28
申请号：US14427151
申请日：2013-10-11
发明人： Hiroji Aga , Toru Ishizuka
IPC分类号： H01L21/46 , H01L21/762 , H01L21/02 , H01L21/265 , H01L21/311
CPC分类号： H01L21/76254 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/31111
摘要： A method for manufacturing SOI wafer of forming an oxide film on a bond wafer of a semiconductor single crystal substrate, forming an ion implanted layer into the bond wafer by implanting ions of at least one kind of gas in hydrogen and rare gases through the oxide film, bonding together an ion implanted front surface of the bond wafer and base wafer front surface via the oxide film, thereafter delaminating the bond wafer along the ion implanted layer, and thereby fabricating an SOI wafer. The oxide film is formed on the bond wafer such that on a back surface it is made thicker than the oxide film on a bonded face. The method for manufacturing SOI wafer capable of suppressing scratches and SOI film thickness abnormality caused by warped shapes of the SOI and bond wafers after delamination where it has been delaminated by an ion implantation delamination method.
摘要翻译： 一种用于制造在半导体单晶衬底的接合晶片上形成氧化膜的SOI晶片的方法，通过将至少一种气体中的至少一种气体的离子注入到氢气和稀有气体中而通过氧化膜形成离子注入层到接合晶片 通过氧化膜将接合晶片和基底晶片前表面的离子注入前表面接合在一起，然后沿离子注入层分层接合晶片，从而制造SOI晶片。 氧化膜形成在接合晶片上，使得其在背面上比粘结面上的氧化物膜厚。 制造SOI晶片的制造方法，其能够通过离子注入分层方法分层后，分解后的SOI和接合晶片的翘曲形状而抑制划痕和SOI膜厚异常。
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公开(公告)号：US09337080B2
公开(公告)日：2016-05-10
申请号：US14428700
申请日：2013-11-07
发明人： Hiroji Aga , Isao Yokokawa , Toru Ishizuka
IPC分类号： H01L21/762 , H01L21/02 , H01L21/265 , H01L27/12
CPC分类号： H01L21/76254 , H01L21/02032 , H01L21/0223 , H01L21/02255 , H01L21/265 , H01L21/76251 , H01L27/12
摘要： The present invention is a method for manufacturing an SOI wafer, including: implanting one or more gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer composed of a semiconductor single crystal substrate from a surface of the bond wafer to form an ion-implanted layer; bonding the surface from which the ion is implanted into the bond wafer and a surface of a base wafer through an oxide film; and then delaminating the bond wafer at the ion-implanted layer by performing a delamination heat treatment with a heat treatment furnace to form the SOI wafer, wherein after the delamination heat treatment, a temperature of the heat treatment furnace is decreased to 250° C. or less at temperature-decreasing rate of less than 3.0° C/min, and then the SOI wafer and the bond wafer after delamination are taken out from the heat treatment furnace.
摘要翻译： 本发明是一种制造SOI晶片的方法，包括：从接合晶片的表面将从氢离子和稀有气体离子中选出的一种或多种气体离子注入由半导体单晶基板构成的接合晶片，以形成 离子注入层; 将离子注入接合晶片的表面和基底晶片的表面通过氧化膜结合; 然后通过用热处理炉进行分层热处理，在离子注入层剥离接合晶片，以形成SOI晶片，其中在分层热处理之后，将热处理炉的温度降低至250℃ 以下，以小于3.0℃/分钟的降温速度，从脱模后的SOI晶片和接合晶片从热处理炉取出。
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公开(公告)号：US09953860B2
公开(公告)日：2018-04-24
申请号：US15313473
申请日：2015-04-13
发明人： Hiroji Aga
IPC分类号： H01L21/762 , H01L27/12 , H01L21/84 , H01L21/66 , H01L21/02
CPC分类号： H01L21/76254 , H01L21/02 , H01L21/0206 , H01L21/02233 , H01L21/84 , H01L22/26 , H01L27/12
摘要： A method of manufacturing an SOI wafer, including (a) forming a thermal oxide film on an SOI layer of an SOI wafer by a heat treatment under an oxidizing gas atmosphere, (b) measuring thickness of the SOI layer after forming the thermal oxide film, (c) performing a batch cleaning, wherein an etching amount of SOI layer is adjusted depending on thickness of the SOI layer measured in step (b) such that thickness of the SOI layer is adjusted to be thicker than a target value after etching, (d) measuring thickness of the SOI layer after batch cleaning, (e) performing a single-wafer cleaning, wherein an etching amount of the SOI layer is adjusted depending on thickness of the SOI layer measured in step (d) such that thickness of the SOI layer is adjusted to be the target value after etching, and removing the thermal oxide film formed in step (a) before or after step (b).
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公开(公告)号：US20150243550A1
公开(公告)日：2015-08-27
申请号：US14427151
申请日：2013-10-11
发明人： Hiroji Aga , Toru Ishizuka
IPC分类号： H01L21/762 , H01L21/265 , H01L21/02
CPC分类号： H01L21/76254 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/31111
摘要： A method for manufacturing SOI wafer of forming an oxide film on a bond wafer of a semiconductor single crystal substrate, forming an ion implanted layer into the bond wafer by implanting ions of at least one kind of gas in hydrogen and rare gases through the oxide film, bonding together an ion implanted front surface of the bond wafer and base wafer front surface via the oxide film, thereafter delaminating the bond wafer along the ion implanted layer, and thereby fabricating an SOI wafer. The oxide film is formed on the bond wafer such that on a back surface it is made thicker than the oxide film on a bonded face. The method for manufacturing SOI wafer capable of suppressing scratches and SOI film thickness abnormality caused by warped shapes of the SOI and bond wafers after delamination where it has been delaminated by an ion implantation delamination method.
摘要翻译： 一种用于制造在半导体单晶衬底的接合晶片上形成氧化膜的SOI晶片的方法，通过将至少一种气体中的至少一种气体的离子注入到氢气和稀有气体中而通过氧化膜形成离子注入层到接合晶片 通过氧化膜将接合晶片和基底晶片前表面的离子注入前表面接合在一起，然后沿离子注入层分层接合晶片，从而制造SOI晶片。 氧化膜形成在接合晶片上，使得其在背面上比粘结面上的氧化物膜厚。 制造SOI晶片的制造方法，其能够通过离子注入分层方法分层后，分解后的SOI和接合晶片的翘曲形状而抑制划痕和SOI膜厚异常。
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