公开(公告)号：US20180258529A1

公开(公告)日：2018-09-13

申请号：US15755962

申请日：2016-08-31

Applicant: SILCOTEK CORP.

Inventor： Thomas F. VEZZA ,  James B. MATTZELA ,  Gary A. BARONE ,  William David GROVE ,  Paul H. SILVIS

IPC: C23C16/455 ,  C23C16/24

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/24

Abstract: Thermal chemical vapor deposition coated articles and thermal chemical vapor deposition processes are disclosed. The thermal chemical vapor deposition coated article includes a substrate and a coating on the substrate, the coating having multiple layers and being positioned on regions of the thermal chemical vapor deposition coated article that are unable to be concurrently coated through line-of-sight techniques. The coating has a concentration of particulate from gas phase nucleation, per 100 square micrometers, of fewer than 6 particles having a dimension of greater than 0.5 micrometers. The thermal chemical vapor deposition process includes introducing a multiple aliquot of a silicon-containing precursor to the enclosed vessel with intermediate gaseous soaking to produce the coated article.

公开(公告)号：US20170211180A1

公开(公告)日：2017-07-27

申请号：US15004455

申请日：2016-01-22

Applicant: SILCOTEK CORP.

Inventor： Thomas F. VEZZA ,  Steven A. CONDO ,  Nicholas Peter DESKEVICH ,  James B. MATTZELA ,  Paul H. SILVIS

IPC: C23C16/455 ,  C23C16/46

CPC classification number: C23C16/455 ,  C23C16/24 ,  C23C16/45502 ,  C23C16/46

Abstract: Thermal chemical vapor deposition coated articles and thermal chemical vapor deposition processes are disclosed. The article includes a substrate and a thermal chemical vapor deposition coating on the substrate. The thermal chemical vapor deposition coating includes properties from being produced by diffusion-rate-limited thermal chemical vapor deposition. The thermal chemical vapor deposition process includes introducing a gaseous species to a vessel and producing a thermal chemical vapor deposition coating on an article within the vessel by a diffusion-rate-limited reaction of the gaseous species.

公开(公告)号：US20190309414A1

公开(公告)日：2019-10-10

申请号：US16379236

申请日：2019-04-09

Applicant: SILCOTEK CORP.

Inventor： Thomas F. VEZZA ,  James B. MATTZELA ,  Gary A. BARONE ,  Jesse BISCHOF ,  David A. SMITH

IPC: C23C16/44

Abstract: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.