MOLYBDENUM SUBSTRATE WITH AN AMORPHOUS CHEMICAL VAPOR DEPOSITION COATING

    公开(公告)号:US20190136371A1

    公开(公告)日:2019-05-09

    申请号:US16181512

    申请日:2018-11-06

    Applicant: SILCOTEK CORP.

    Inventor: Jesse BISCHOF

    Abstract: Article having a molybdenum substrate and an amorphous chemical vapor deposition coating on the molybdenum substrate, processes of using the articles, and processes of producing the articles are disclosed. The articles include a molybdenum substrate and an amorphous chemical vapor deposition coating on the molybdenum substrate. The amorphous chemical vapor deposition coating includes silicon. The processes of using the article include exposing the article to temperatures of greater than 1,200° C. The processes of producing the article include positioning the molybdenum substrate, and applying the amorphous chemical vapor deposition coating on the molybdenum substrate through thermal chemical vapor deposition.

    LIQUID CHROMATOGRAPHY TECHNIQUE
    4.
    发明申请

    公开(公告)号:US20210170305A1

    公开(公告)日:2021-06-10

    申请号:US17177770

    申请日:2021-02-17

    Applicant: SILCOTEK CORP.

    Abstract: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid-contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150° C., pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one or both of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone, and combinations thereof

    LIQUID CHROMATOGRAPHY TECHNIQUE
    5.
    发明申请

    公开(公告)号:US20210101092A1

    公开(公告)日:2021-04-08

    申请号:US16971216

    申请日:2019-02-22

    Applicant: SILCOTEK CORP.

    Abstract: LC techniques are disclosed. The LC technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150 degree Celsius, pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone.

    DIELECTRIC ARTICLE
    6.
    发明申请

    公开(公告)号:US20210384601A1

    公开(公告)日:2021-12-09

    申请号:US17328317

    申请日:2021-05-24

    Applicant: SILCOTEK CORP.

    Abstract: Dielectric coatings, articles having dielectric coatings, and systems including coating having dielectric coatings are disclosed. The dielectric article includes a substrate having hidden surfaces and a dielectric coating on the hidden surfaces of the substrate. The dielectric coating has a bulk resistivity of at least 108 Ω·cm and a thickness of between 30 nanometers and 3,000 nanometers.

    LIQUID CHROMATOGRAPHY TECHNIQUE
    7.
    发明申请

    公开(公告)号:US20190262745A1

    公开(公告)日:2019-08-29

    申请号:US16282626

    申请日:2019-02-22

    Applicant: SILCOTEK CORP.

    Abstract: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid-contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150° C., pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one or both of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone, and combinations thereof.

    COLD THERMAL CHEMICAL VAPOR DEPOSITION
    8.
    发明公开

    公开(公告)号:US20240117495A1

    公开(公告)日:2024-04-11

    申请号:US17768249

    申请日:2020-10-13

    Applicant: SILCOTEK CORP.

    CPC classification number: C23C16/52 C23C16/4404 C23C16/45523 C23C16/46

    Abstract: Cold thermal chemical vapor deposition coatings, articles, and processes are disclosed. Specifically, a cold thermal chemical vapor deposition process includes positioning an article, heating a precursor gas to at least a decomposition temperature of the precursor gas to produce a deposition gas, introducing the deposition gas to a coating vessel, and depositing a coating from the deposition gas onto the article within the coating vessel. The article remains at a temperature below the decomposition temperature throughout the introducing and depositing of the deposition gas. The coating on the article has a gradient formed by the depositing of the coating having no flow for a period of time. The coated article includes a thermally-sensitive substrate (the thermally-sensitive substrate capable of being modified by a temperature of 300 degrees Celsius) and a coating the thermally-sensitive substrate.

    CHEMICAL VAPOR DEPOSITION PROCESS AND COATED ARTICLE

    公开(公告)号:US20190309414A1

    公开(公告)日:2019-10-10

    申请号:US16379236

    申请日:2019-04-09

    Applicant: SILCOTEK CORP.

    Abstract: Chemical vapor deposition processes and coated articles are disclosed. The process includes a first introducing of a first amount of silane to the enclosed chamber, the first amount of the silane remaining within the enclosed chamber for a first period of time, a first decomposing of the first amount of the silane during at least a portion of the first period of time, a second introducing of a second amount of the silane to the enclosed chamber, the second amount of the silane remaining within the enclosed chamber for a second period of time, and a second decomposing of the second amount of the silane during at least a portion of the second period of time. The process is devoid of inert gas purging between the first decomposing and the second introducing and/or produces a chemical vapor deposition coating devoid of hydrogen bubbles.

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