公开(公告)号：US20210261790A1

公开(公告)日：2021-08-26

申请号：US17306586

申请日：2021-05-03

Applicant: SILCOTEK CORP.

Inventor： Geoffrey K. WHITE ,  Nikolis Austin SNYDER ,  Nicholas Peter DESKEVICH ,  Gary A. BARONE ,  David A. SMITH ,  Lucas D. PATTERSON ,  Martin E. HIGGINS

IPC: C09D5/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/32 ,  C23C16/54 ,  C23C16/46 ,  C09D1/00 ,  C09D183/04 ,  C09D183/16

Abstract: A coated system for containing or conveying a hydrogen-containing fluid including a hydrogen susceptible metallic substrate and a coating on the hydrogen susceptible metallic substrate. The hydrogen-containing fluid is in contact with the coating and the coating reduces or eliminates the effect of hydrogen on the hydrogen susceptible metallic substrate. A coating process for coating a hydrogen susceptible metallic substrate is also disclosed.

公开(公告)号：US20160053375A1

公开(公告)日：2016-02-25

申请号：US14818517

申请日：2015-08-05

Applicant: SILCOTEK CORP.

Inventor： Nicholas Peter DESKEVICH ,  William David GROVE

IPC: C23C16/455 ,  C23C16/48

CPC classification number: C23C16/45561 ,  C23C16/48 ,  C23C16/481 ,  C23C16/52

Abstract: A chemical vapor deposition system, method and arrangement of systems are disclosed. The arrangement of chemical vapor deposition systems includes a first chemical vapor deposition system comprising a first coating chamber, a second chemical vapor deposition system comprising a second coating chamber, and a fluid introduction system comprising a vacuum pump and a fluid introduction arrangement arranged and disposed to introduce a fluid to one or both of the first coating chamber and the second coating chamber for chemical vapor deposition coating. At least a portion of the fluid introduction system is arranged for operation with the first chemical vapor deposition system and the second chemical vapor deposition system. The chemical vapor deposition method includes operating the second chemical vapor deposition system. The chemical vapor deposition system includes a non-cuboid coating chamber.

Abstract translation: 公开了一种化学气相沉积系统，系统的方法和装置。 化学气相沉积系统的布置包括第一化学气相沉积系统，其包括第一涂覆室，包括第二涂覆室的第二化学气相沉积系统和包括真空泵和流体引入装置的流体引入系统， 将流体引入用于化学气相沉积涂层的第一涂覆室和第二涂覆室中的一个或两个。 流体引入系统的至少一部分被布置成与第一化学气相沉积系统和第二化学气相沉积系统一起操作。 化学气相沉积方法包括操作第二化学气相沉积系统。 化学气相沉积系统包括非长方体涂层室。

公开(公告)号：US20190218661A1

公开(公告)日：2019-07-18

申请号：US16249314

申请日：2019-01-16

Applicant: SILCOTEK CORP.

Inventor： Geoffrey K. WHITE ,  Lucas D. PATTERSON ,  Corey M. ROBINSON ,  William David GROVE ,  Nicholas Peter DESKEVICH

IPC: C23C16/22

CPC classification number: C23C16/22

Abstract: A spooled arrangement and a process of producing a spooled arrangement are disclosed. The spooled arrangement includes a substrate, the substrate being metal or metallic. The substrate has an inner surface and an outer surface, the inner surface and the outer surface being in a furled configuration to define the spooled arrangement. The inner surface and the outer surface have a coating, the coating being an amorphous silicon coating, a silicon-oxygen-carbon-containing coating, a silicon-nitrogen-containing coating, a silicon-fluorine-carbon-containing coating, or a combination thereof. The process includes producing the spooled arrangement.

公开(公告)号：US20170211180A1

公开(公告)日：2017-07-27

申请号：US15004455

申请日：2016-01-22

Applicant: SILCOTEK CORP.

Inventor： Thomas F. VEZZA ,  Steven A. CONDO ,  Nicholas Peter DESKEVICH ,  James B. MATTZELA ,  Paul H. SILVIS

IPC: C23C16/455 ,  C23C16/46

CPC classification number: C23C16/455 ,  C23C16/24 ,  C23C16/45502 ,  C23C16/46

Abstract: Thermal chemical vapor deposition coated articles and thermal chemical vapor deposition processes are disclosed. The article includes a substrate and a thermal chemical vapor deposition coating on the substrate. The thermal chemical vapor deposition coating includes properties from being produced by diffusion-rate-limited thermal chemical vapor deposition. The thermal chemical vapor deposition process includes introducing a gaseous species to a vessel and producing a thermal chemical vapor deposition coating on an article within the vessel by a diffusion-rate-limited reaction of the gaseous species.