公开(公告)号：US20140062557A1

公开(公告)日：2014-03-06

申请号：US13720992

申请日：2012-12-19

Applicant: SK HYNIX INC.

Inventor： Sung Woo HAN ,  Ic Su OH ,  Jun Ho LEE ,  Boo Ho JUNG ,  Sun Ki CHO ,  Yang Hee KIM ,  Tae Hoon KIM

IPC: H03K5/12

CPC classification number: H03K3/013 ,  G06F17/5022 ,  H03K5/12

Abstract: Provided is a method for reducing output data noise of a semiconductor apparatus which includes a plurality of output buffers to output data. The method includes the steps of: driving low data to a specific output buffer among the plurality of output buffers, and driving data transiting from a high level to a low level to the other output buffers; and measuring the magnitude of data noise occurring in output data of the specific output buffer, and deciding slew rates of the plurality of output buffers based on the measurement result.

Abstract translation: 提供了一种减少包括多个输出缓冲器以输出数据的半导体装置的输出数据噪声的方法。 该方法包括以下步骤：将低数据驱动到多个输出缓冲器中的特定输出缓冲器，以及驱动数据从高电平转移到低电平到另一个输出缓冲器; 以及测量在特定输出缓冲器的输出数据中发生的数据噪声的大小，以及基于测量结果确定多个输出缓冲器的转换速率。

公开(公告)号：US20150109041A1

公开(公告)日：2015-04-23

申请号：US14581357

申请日：2014-12-23

Applicant: SK hynix Inc.

Inventor： Sung Woo HAN ,  Ic Su OH ,  Jun Ho LEE ,  Boo Ho JUNG ,  Sun Ki CHO ,  Yang Hee KIM ,  Tae Hoon KIM

IPC: H03K3/013 ,  H03K5/12

CPC classification number: H03K3/013 ,  G06F17/5022 ,  H03K5/12

Abstract: Provided is a semiconductor apparatus which includes a plurality of output buffers configured to connect a plurality of power sources, and a data noise measuring unit configured to fix an output data of a selected output buffer among the plurality of output buffers to have a specific level, measure a noise of the output data using a capacitance and control a slew rate of the plurality of output buffers based on the noise.

Abstract translation: 提供了一种半导体装置，其包括多个输出缓冲器，其被配置为连接多个电源;以及数据噪声测量单元，被配置为将所述多个输出缓冲器中的所选输出缓冲器的输出数据固定为具有特定电平， 使用电容测量输出数据的噪声，并基于噪声控制多个输出缓冲器的转换速率。

公开(公告)号：US20140140016A1

公开(公告)日：2014-05-22

申请号：US13845568

申请日：2013-03-18

Applicant: SK HYNIX INC.

Inventor： Jun Ho LEE ,  Sung Woo HAN ,  Ic Su OH ,  Boo Ho JUNG ,  Sun Ki CHO ,  Yang Hee KIM ,  Tae Hoon KIM

IPC: H03H7/01 ,  H05K1/18

CPC classification number: H03H7/0115 ,  G11C5/14 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5286 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/6661 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A power metal mesh and a semiconductor memory device including the same are provided. As the power metal mesh configured to reduce noise coupling generated between adjacent chips disposed on an interposer, a band stop filter unit including an inductor and a capacitor coupled in parallel is disposed between the adjacent chips to effectively reduce the noise coupling of a specific frequency band generated between the adjacent chips.

Abstract translation: 提供了一种功率金属网和包括其的半导体存储器件。 由于功率金属网被配置为减少在设置在插入器上的相邻芯片之间产生的噪声耦合，所以包括电感器和并联的电容器的带阻滤波器单元设置在相邻芯片之间，以有效地减小特定频带的噪声耦合 在相邻芯片之间产生。