公开(公告)号：US12110421B2

公开(公告)日：2024-10-08

申请号：US17570230

申请日：2022-01-06

申请人： SK enpulse Co., Ltd.

发明人： Seung Chul Hong ,  Deok Su Han ,  Han Teo Park

IPC分类号： C09G1/02 ,  H01L21/3105 ,  H01L21/321

CPC分类号： C09G1/02 ,  H01L21/31053 ,  H01L21/3212

摘要： Provided is a composition for semiconductor processing including abrasive particles and at least one additive. The composition may exhibit excellent polishing performance by being applied to a process of polishing a semiconductor wafer, may minimize defects in a polishing target surface, may achieve flat polishing without a difference in flatness between a plurality of different layers when used to polish the externally exposed surfaces of the layers, and may be applied to polishing of the surface of a semiconductor wafer having a through silicon via (TSV). Also provided is a method of fabricating a semiconductor device using the composition.

公开(公告)号：US12116503B2

公开(公告)日：2024-10-15

申请号：US17734073

申请日：2022-05-01

申请人： SK enpulse Co., Ltd.

发明人： Seung Chul Hong ,  Deok Su Han ,  Jang Kuk Kwon ,  Han Teo Park

IPC分类号： C09G1/02 ,  H01L21/321

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： The present disclosure relates to a polishing composition for a semiconductor process that may increase a polishing rate of a boron-doped polysilicon layer, improve polishing selectivity, prevent a defect of a wafer that may occur in a polishing process, and improving surface roughness of the wafer, and a method for polishing a substrate by using the same. In addition, the present disclosure relates to a method for manufacturing a polished substrate by using a polishing composition for a semiconductor process.