公开(公告)号：US09437444B2

公开(公告)日：2016-09-06

申请号：US14062563

申请日：2013-10-24

申请人： SK hynix Inc.

发明人： Sung-Kwon Lee ,  Jun-Hyeub Sun ,  Ho-Jin Jung ,  Chun-Hee Lee

IPC分类号： H01L21/311 ,  H01L21/308 ,  H01L21/033

CPC分类号： H01L21/3086 ,  H01L21/0337

摘要： A method for fabricating a semiconductor device includes forming a plurality of first hard mask patterns separated by a plurality of trenches on a target layer, forming a plurality of second hard mask patterns filling the plurality of trenches, forming a plurality of first opening units in the plurality of second hard mask patterns, forming a plurality of second opening units in the plurality of first hard mask patterns and forming a plurality of patterns using the plurality of first opening units and the plurality of second opening units, which are transferred by etching the target layer.

摘要翻译： 一种制造半导体器件的方法包括：在目标层上形成多个由多个沟槽隔开的第一硬掩模图案，形成填充多个沟槽的多个第二硬掩模图案，形成多个第一开口单元， 多个第二硬掩模图案，在所述多个第一硬掩模图案中形成多个第二开口单元，并且使用所述多个第一开口单元和所述多个第二开口单元形成多个图案，所述多个第一开口单元和所述多个第二开口单元通过蚀刻所述目标 层。