公开(公告)号：US20140063968A1

公开(公告)日：2014-03-06

申请号：US13719201

申请日：2012-12-18

申请人： SK HYNIX INC.

发明人： Jung Woon Shim ,  Sung Jae Chung ,  Jin Gu Kim ,  Dong Hwan Lee ,  Seung Won Kim ,  Su Min Yi

IPC分类号： G11C16/10 ,  G11C16/06

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/3459

摘要： A semiconductor memory device includes a memory block configured to include memory cells coupled to word lines and a peripheral circuit configured to perform a first program operation, a program verifying operation and a second program verifying operation for memory cells coupled to a word line selected from the word lines, and supply program allowable voltages having different levels to selected bit lines of program allowable cells located between program inhibition cells in the first program operation and the second program operation.

摘要翻译： 半导体存储器件包括：存储器块，被配置为包括耦合到字线的存储器单元和被配置为执行第一程序操作，外部电路的程序验证操作和用于耦合到从 字线，以及在第一程序操作中的位于程序禁止单元之间的程序允许单元的选择位线与第二程序操作之间具有不同电平的程序允许电压。

公开(公告)号：US09418748B2

公开(公告)日：2016-08-16

申请号：US14843005

申请日：2015-09-02

申请人： SK hynix Inc.

发明人： Jun Hyuk Lee ,  Eun Joung Lee ,  Yoon Soo Jang ,  Seung Won Kim

IPC分类号： G11C7/00 ,  G11C16/26 ,  G11C16/24 ,  G11C16/10

CPC分类号： G11C16/26 ,  G11C16/10 ,  G11C16/24

摘要： A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

公开(公告)号：US09159433B2

公开(公告)日：2015-10-13

申请号：US13803788

申请日：2013-03-14

申请人： SK hynix Inc.

发明人： Jun Hyuk Lee ,  Eun Joung Lee ,  Yoon Soo Jang ,  Seung Won Kim

IPC分类号： G11C11/34 ,  G11C16/24

CPC分类号： G11C16/26 ,  G11C16/10 ,  G11C16/24

摘要： A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

摘要翻译： 公开了一种半导体存储器件及其操作方法。 半导体存储器件包括：存储单元阵列，包括存储块;电压发生器，被配置为产生预充电电压; 以及读取和写入电路，通过位线耦合到存储器块，并且被配置为当访问所选择的存储器块时将预充电电压提供给位线。 这里，预充电电压根据读取和写入电路与所选存储器块之间的距离而变化。

公开(公告)号：US09082488B2

公开(公告)日：2015-07-14

申请号：US13719201

申请日：2012-12-18

申请人： SK hynix Inc.

发明人： Jung Woon Shim ,  Sung Jae Chung ,  Jin Gu Kim ,  Dong Hwan Lee ,  Seung Won Kim ,  Su Min Yi

IPC分类号： G11C16/12 ,  G11C16/10 ,  G11C16/06 ,  G11C16/04 ,  G11C16/34

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/3459

摘要： A semiconductor memory device includes a memory block configured to include memory cells coupled to word lines and a peripheral circuit configured to perform a first program operation, a program verifying operation and a second program verifying operation for memory cells coupled to a word line selected from the word lines, and supply program allowable voltages having different levels to selected bit lines of program allowable cells located between program inhibition cells in the first program operation and the second program operation.

摘要翻译： 半导体存储器件包括：存储器块，被配置为包括耦合到字线的存储器单元和被配置为执行第一程序操作，外部电路的程序验证操作和用于耦合到从 字线，以及在第一程序操作中的位于程序禁止单元之间的程序允许单元的选择位线与第二程序操作之间具有不同电平的程序允许电压。