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公开(公告)号：US20220243149A1
公开(公告)日：2022-08-04
申请号：US17549939
申请日：2021-12-14
发明人： Kyung Hee OH , Jun Kyoung LEE , Tomoya KUMAGAI , Motoki TAKAHASHI
摘要： The present disclosure relates to a thinner composition for removing a resist and a processing method of a semiconductor substrate using the thinner composition. Particularly, the thinner composition includes (a) propylene glycol monoalkyl ether, (b) propylene glycol monoalkyl ether acetate, (c) cyclohexanone, and (d) cyclopentanone. In addition, the processing method of a semiconductor substrate includes applying a resist composition on a semiconductor substrate and removing the applied resist composition using the thinner composition of the present invention.
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公开(公告)号：US20160122695A1
公开(公告)日：2016-05-05
申请号：US14925034
申请日：2015-10-28
发明人： Tomoya KUMAGAI , Naohisa UENO , Mai SUGAWARA
CPC分类号： C11D7/3281 , C11D7/265 , C11D7/3209 , C11D7/5022 , C11D11/0047 , C23F11/10 , C23G1/16
摘要： A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.
摘要翻译： 一种用于光刻的清洁液体，其能够去除在蚀刻工艺之后残留的残余材料，以及抑制钴及其合金中的至少一种的腐蚀，以及使用该清洗液清洗基板的方法。 用于光刻的清洁液包括羟胺，至少一种选自羟胺以外的胺化合物的碱性化合物和季铵氢氧化物和水，并且具有8或更高的pH值。 清洗液用于清洗含有钴及其合金中的至少一种的基材。
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公开(公告)号：US20170059994A1
公开(公告)日：2017-03-02
申请号：US15241519
申请日：2016-08-19
发明人： Kazufumi SATO , Mitsuo HAGIHARA , Tomoya KUMAGAI , Masahito YAHAGI , Kenta SUZUKI , Takayoshi MORI , Ryoji WATANABE
CPC分类号： G03F7/322 , G03F7/2059
摘要： A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: in which R1 to R4 each independently represent a linear or branched alkyl group, and the total number of carbon atoms contained in each of the alkyl groups represented by R1 to R4 is 4 to 15.
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4.发明公开公开(公告)号：US20230183866A1
公开(公告)日：2023-06-15
申请号：US18062841
申请日：2022-12-07
发明人： Mai SUGAWARA , Tomoya KUMAGAI
IPC分类号： C23G1/02
CPC分类号： C23G1/02
摘要： A metal resist remover containing a solvent and a strong acid that is liquid at 20° C., in which a pH value, which is measured with a pH meter, of a liquid formed by subjecting the cleaning liquid to a 10-fold dilution with pure water is 2.5 or less.
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5.发明公开公开(公告)号：US20230183617A1
公开(公告)日：2023-06-15
申请号：US18062226
申请日：2022-12-06
发明人： Mai SUGAWARA , Tomoya KUMAGAI
CPC分类号： C11D7/08 , C11D7/265 , C11D11/0047 , H01L21/02087
摘要： A metal resist remover containing a solvent and a sulfuric acid, in which a pH value, which is measured with a pH meter, of a liquid formed by subjecting the cleaning liquid to a 10-fold dilution with pure water is 2.5 or less.
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公开(公告)号：US20160208201A1
公开(公告)日：2016-07-21
申请号：US15084295
申请日：2016-03-29
发明人： Tomoya KUMAGAI , Takahiro ETO
CPC分类号： C11D7/5022 , B08B3/08 , C11D7/08 , C11D7/263 , C11D7/3209 , C11D7/5009 , G03F7/423 , G03F7/425 , H01L21/0206 , H01L21/02063 , H01L21/02068
摘要： A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.
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