公开(公告)号：US20240093403A1

公开(公告)日：2024-03-21

申请号：US18264975

申请日：2022-02-10

Applicant: SOCPRA SCIENCES ET GENIE S.E.C.

Inventor： Mohammad Reza AZIZIYAN ,  Ionela-roxana ARVINTE ,  Abderraouf BOUCHERIF ,  Richard ARÈS

IPC: C30B25/20 ,  C30B25/10 ,  C30B25/18 ,  C30B29/08 ,  C30B33/02

CPC classification number: C30B25/20 ,  C30B25/10 ,  C30B25/186 ,  C30B29/08 ,  C30B33/02

Abstract: There is described a method of manufacturing an optoelectronic device. The method generally has: etching a wafer of monocrystalline germanium, said etching forming a given density of pores contained within said monocrystalline germanium, with at least some of said pores being exposed at a surface of said wafer; depositing a substrate layer of a given crystalline material onto said surface, said substrate layer closing exposed ones of said pores; heating said wafer and said substrate layer, said heating transforming said pores into cavity-interspersed pillars interconnected to one another within said wafer; making a semiconductor component integral to said substrate layer, including collectively forming said optoelectronic device; and breaking said cavity-interspersed pillars of said wafer thereby freeing said optoelectronic device from a remaining wafer portion of said wafer.