公开(公告)号：US20240011193A1

公开(公告)日：2024-01-11

申请号：US18041554

申请日：2021-08-19

Applicant: SOCPRA SCIENCES ET GENIE S.E.C.

Inventor： Youcef Ataellah BIOUD ,  Abderraouf BOUCHERIF ,  Richard ARÈS

IPC: C30B33/10 ,  H01L21/02 ,  C30B29/08 ,  C30B33/02 ,  C30B31/22 ,  C25F3/12

CPC classification number: C30B33/10 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  C30B29/08 ,  C30B33/02 ,  C30B31/22 ,  C25F3/12

Abstract: There is described a method of manufacturing a substrate for an optoelectronic device. The method has the steps of: supporting a first layer of a first crystalline material on a second layer of a second crystalline material different from said first crystalline material thereby exposing crystalline defects at a surface of said first layer; etching said first layer using first etching conditions, at least some of said crystalline defects expanding into pores running from said surface of the first layer towards said second layer; and heating said first and second layers up to a first temperature for a first period of time within a given environment, said heating transforming said pores into nanovoids attracting at least some of said crystalline defects away from said surface. In some embodiments, the method has a step of reheating the layers or a step of forming a pore containing region within the first layer.