Abstract:
A solid-state image-taking apparatus which have a solid-state image-taking device includes a chip of the solid-state image-taking device, an imaging lens configured to focus incoming light into an image on the solid-state image-taking device, and a material of a refraction index larger than 1, which is arranged between the chip and the imaging lens.
Abstract:
There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.
Abstract:
There is provided a light receiving and emitting device including: a light receiving and emitting unit configured to have a plurality of pixels that receive light and perform photoelectric conversion through which an electric signal corresponding to an amount of the light is output and a plurality of light emitting units that emit light, the two or more light emitting units being disposed for every two or more pixels; an imaging optical system configured to form an image on the pixels of the light receiving and emitting unit; and a control unit configured to independently control light emission of the plurality of respective light emitting units.
Abstract:
There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.
Abstract:
A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.
Abstract:
A solid-state imaging apparatus includes a pixel array part having a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of light in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.
Abstract:
Solid-state imaging devices (1) including: a substrate (12); a photoelectric conversion section (50) comprising a chalcopyrite material formed over the substrate in a light incident side; a transparent electrode (57) in the light incident side of the photoelectric conversion section; and an electron barrier layer (58) formed between the photoelectric conversion section and the transparent electrode; and methods of manufacturing the solid-state imaging devices and electronic apparatuses including the solid-state imaging devices.