公开(公告)号：US11127771B2

公开(公告)日：2021-09-21

申请号：US16169735

申请日：2018-10-24

Applicant: SONY CORPORATION

Inventor： Yusuke Tanaka ,  Toshifumi Wakano ,  Keiji Tatani ,  Takashi Nagano ,  Hayato Iwamoto ,  Keiichi Nakazawa ,  Tomoyuki Hirano ,  Shinpei Yamaguchi ,  Shunsuke Maruyama

IPC: H01L27/148 ,  H01L27/146

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

公开(公告)号：US20140327052A1

公开(公告)日：2014-11-06

申请号：US14244485

申请日：2014-04-03

Applicant: Sony Corporation

Inventor： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

Abstract translation: 公开了一种固态成像装置，其包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和形成有STI结构的第二隔离区域 半导体衬底。 埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

公开(公告)号：US10438983B2

公开(公告)日：2019-10-08

申请号：US15072538

申请日：2016-03-17

Applicant: Sony Corporation

Inventor： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC: H01L31/02 ,  H01L27/146 ,  H01L27/148

Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

公开(公告)号：US11094725B2

公开(公告)日：2021-08-17

申请号：US16121418

申请日：2018-09-04

Applicant: SONY CORPORATION

Inventor： Yusuke Tanaka ,  Toshifumi Wakano ,  Keiji Tatani ,  Takashi Nagano ,  Hayato Iwamoto ,  Keiichi Nakazawa ,  Tomoyuki Hirano ,  Shinpei Yamaguchi ,  Shunsuke Maruyama

IPC: H01L27/148 ,  H01L27/146

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

公开(公告)号：US20160197109A1

公开(公告)日：2016-07-07

申请号：US15072538

申请日：2016-03-17

Applicant: Sony Corporation

Inventor： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC: H01L27/146

Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.