中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

57 records (took 0.04 seconds)

    Solid-state imaging device, method of manufacturing the same, and imaging apparatus
    1.
    发明授权
    Solid-state imaging device, method of manufacturing the same, and imaging apparatus 有权

    公开(公告)号：US11355533B2

    公开(公告)日：2022-06-07

    申请号：US15645604

    申请日：2017-07-10

    Applicant: Sony Corporation

    Inventor： Takuji Matsumoto ,  Keiji Tatani ,  Tetsuji Yamaguchi ,  Masashi Nakata

    IPC: H01L27/146

    Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

    Solid-state imaging device, method of manufacturing the same, and electronic apparatus
    2.
    发明授权
    Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权

    公开(公告)号：US11127771B2

    公开(公告)日：2021-09-21

    申请号：US16169735

    申请日：2018-10-24

    Applicant: SONY CORPORATION

    Inventor： Yusuke Tanaka ,  Toshifumi Wakano ,  Keiji Tatani ,  Takashi Nagano ,  Hayato Iwamoto ,  Keiichi Nakazawa ,  Tomoyuki Hirano ,  Shinpei Yamaguchi ,  Shunsuke Maruyama

    IPC: H01L27/148 ,  H01L27/146

    Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

    Semiconductor device, method of manufacturing semiconductor device, and solid-state imaging apparatus
    4.
    发明授权
    Semiconductor device, method of manufacturing semiconductor device, and solid-state imaging apparatus 有权

    公开(公告)号：US10008523B2

    公开(公告)日：2018-06-26

    申请号：US15094530

    申请日：2016-04-08

    Applicant: Sony Corporation

    Inventor： Keiji Tatani

    IPC: H01L27/146

    CPC classification number: H01L27/14605 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14689

    Abstract: A semiconductor device includes a gate electrode formed on a substrate with a gate insulating layer in between, an insulating layer of property and thickness that allow for a silicide block formed in a first region of the substrate so as to cover the gate electrode, a sidewall formed to at least partly include the insulating layer at a side of the gate electrode, a first impurity region formed by implantation of a first impurity in a peripheral region of the gate electrode formed in the first region of the substrate before the insulating layer is formed, a second impurity region formed by implantation of a second impurity in a peripheral region of the sidewall of the gate electrode formed in a second region of the substrate after the sidewall is formed, and a silicide layer formed on a surface of the second impurity region of the substrate.

    SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
    7.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 审中-公开
    固态成像装置，制造固态成像装置的方法和电子装置

    公开(公告)号：US20160111462A1

    公开(公告)日：2016-04-21

    申请号：US14976905

    申请日：2015-12-21

    Applicant: Sony Corporation

    Inventor： Tomoharu Ogita ,  Atsushi Yamamoto ,  Keiji Tatani ,  Yoichi Ootsuka ,  Kiyotaka Tabuchi

    IPC: H01L27/146

    CPC classification number: H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14868 ,  H04N5/378 ,  H04N9/045

    Abstract: An imaging device includes a plurality of photoelectric conversion elements, a plurality of color filter components having a first color filter component and a second color filter component; a light shielding portion, at least a part of which is disposed between the first and second color filter components in a cross-section view; and a transparent film, at least a first part of which is disposed between the first color filter component and the light shielding portion in the cross-section view. A surface of the transparent film facing to the first and second color filter components is nonplanar, and a thickness of the transparent film is less than a thickness of the light shielding portion.

    Abstract translation: 一种成像装置包括多个光电转换元件，具有第一滤色器部件和第二滤色器部件的多个滤色器部件; 光屏蔽部分，其至少一部分在横截面图中设置在第一和第二滤色器部件之间; 以及透明膜，其截面图中的至少第一部分设置在第一滤色器部件和遮光部之间。 面向第一和第二滤色器部件的透明膜的表面是非平面的，并且透明膜的厚度小于遮光部分的厚度。

    Solid-state imaging device, method of manufacturing the same, and imaging apparatus
    8.
    发明授权
    Solid-state imaging device, method of manufacturing the same, and imaging apparatus 有权
    固态成像装置及其制造方法和成像装置

    公开(公告)号：US09142589B2

    公开(公告)日：2015-09-22

    申请号：US14063235

    申请日：2013-10-25

    Applicant: Sony Corporation

    Inventor： Takuji Matsumoto ,  Keiji Tatani ,  Tetsuji Yamaguchi ,  Masashi Nakata

    IPC: H01L27/146

    CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

    Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

    Abstract translation: 一种固态成像装置，包括设置在半导体基板上并将入射光光电转换为信号电荷的光电转换部，设置在半导体基板上的像素晶体管部，其转换为从光电转换 以及设置在半导体衬底上并将光电转换部分与其中设置有像素晶体管部分的有源区隔离的元件隔离区域。 像素晶体管部分包括多个晶体管。 在多个晶体管中，在其栅电极的栅极宽度方向朝向光电转换部的至少一个晶体管中，至少栅电极的光电转换部侧部分配置在有源区内并具有有源区， 其间的栅极绝缘膜。

Patent Agency Ranking