公开(公告)号：US12120897B2

公开(公告)日：2024-10-15

申请号：US17424582

申请日：2020-01-21

申请人： SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Takushi Shigetoshi ,  Hideaki Togashi ,  Junpei Yamamoto ,  Shinpei Fukuoka ,  Moe Takeo ,  Sho Nishida

IPC分类号： H10K39/32

CPC分类号： H10K39/32

摘要： A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

公开(公告)号：US12028612B2

公开(公告)日：2024-07-02

申请号：US17638318

申请日：2020-09-03

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION ,  SONY GROUP CORPORATION

发明人： Yusuke Murakawa ,  Hideaki Togashi ,  Yoshito Nagashima ,  Akira Furukawa ,  Yoshihiro Ando ,  Yasumasa Akutagawa ,  Taku Minoda ,  Hiroki Iwashita ,  Takahito Niwa ,  Sho Nishida ,  Mikio Ishimaru

IPC分类号： H04N23/67 ,  H01L27/146 ,  H04N25/704

CPC分类号： H04N23/672 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/1463 ,  H04N25/704

摘要： An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

公开(公告)号：US12123744B2

公开(公告)日：2024-10-22

申请号：US17436171

申请日：2020-02-12

申请人： SONY GROUP CORPORATION

发明人： Sho Nishida ,  Kenta Endo ,  Kei Nakagawa ,  Takao Tanikame

IPC分类号： G01C3/06 ,  G01C3/08 ,  G01S7/4914 ,  G01S7/4915 ,  G01S17/894 ,  G01S17/931 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/107

CPC分类号： G01C3/06 ,  G01S7/4914 ,  G01S7/4915 ,  G01S17/894 ,  G01S17/931 ,  H01L31/0203 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/107 ,  G01C3/08

摘要： A distance measuring device according to the present disclosure includes: a light-receiving section including a first light-receiving pixel and a second light-receiving pixel that are configured to detect light, and a light-shielded pixel that is light-shielded, the first light-receiving pixel, the light-shielded pixel, and the second light-receiving pixel being disposed in a first direction in this order; and a processor that is configured to measure a distance to a measurement object on the basis of a detection result in the first light-receiving pixel and a detection result in the second light-receiving pixel.