Method of growing germanium crystals

    公开(公告)号:US10125431B2

    公开(公告)日:2018-11-13

    申请号:US14900426

    申请日:2014-06-20

    Abstract: In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.

    Method of Growing Germanium Crystals
    2.
    发明申请
    Method of Growing Germanium Crystals 审中-公开
    生长锗晶体的方法

    公开(公告)号:US20160153117A1

    公开(公告)日:2016-06-02

    申请号:US14900426

    申请日:2014-06-20

    CPC classification number: C30B15/28 C30B15/10 C30B29/08

    Abstract: In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.

    Abstract translation: 根据本发明,教导了在钢炉内使用石英屏蔽的高纯度锗晶体生长方法。 石英屏蔽适用于不仅引导惰性气体的流动,而且还防止锗熔体受绝缘材料,石墨坩埚,感应线圈和不锈钢室的污染。 称重传感器可自动控制晶体直径,有助于确保锗熔体的耗尽。 该方法既方便又有效地通过相对低的熟练操作者生产高纯锗晶体。

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