公开(公告)号：US09165762B2

公开(公告)日：2015-10-20

申请号：US13869369

申请日：2013-04-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Kathrine Crook ,  Andrew Price ,  Mark Carruthers ,  Daniel Archard ,  Stephen Burgess

IPC: H01L21/316 ,  H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56

CPC classification number: H01L21/02274 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0234

Abstract: A method of forming silicon dioxide films using plasma enhanced chemical vapor deposition (PECVD) uses tetraethyl orthosilicate (TEOS), oxygen or a source of oxygen, and hydrogen as precursors. The method can be carried out at low temperatures in a range of 125 to 175° C. which is useful for manufacturing wafers with through silicon vias.

Abstract translation: 使用等离子体增强化学气相沉积（PECVD）形成二氧化硅膜的方法使用原硅酸四乙酯（TEOS），氧或氧源，以及氢作为前体。 该方法可以在125-175℃的低温下进行，这对于通过硅通孔制造晶片是有用的。

公开(公告)号：US11217442B2

公开(公告)日：2022-01-04

申请号：US16394369

申请日：2019-04-25

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Mark Carruthers

IPC: H01L21/02 ,  H01L27/12 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: A method of depositing a SiN film onto a flexible substrate includes providing the flexible substrate, and depositing the SiN film onto the flexible substrate in a plasma enhanced chemical vapour deposition (PECVD) process using SiH4, N2 and H2, in which the temperature of the substrate is 200° C. or less and SiH4 is introduced into the PECVD process at a flow rate of greater than 100 sccm.

公开(公告)号：US10309014B2

公开(公告)日：2019-06-04

申请号：US15590063

申请日：2017-05-09

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Kathrine Crook ,  Mark Carruthers ,  Andrew Price

IPC: C23C16/44 ,  C23C16/452 ,  C23C16/52 ,  B08B7/00 ,  H01J37/32

Abstract: A method of cleaning a chamber of a plasma processing device with radicals includes creating a plasma within a remote plasma source which is separated from the chamber, the plasma including radicals and ions, cleaning the chamber by allowing radicals to enter the chamber from the remote plasma source while preventing the majority of the ions created in the remote plasma source from entering the chamber, detecting a DC bias developed on a component of the chamber during cleaning; and using the detected DC bias to determine an end-point of the cleaning and, on determination of the end-point, to stop the cleaning.