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公开(公告)号：US20170256416A1
公开(公告)日：2017-09-07
申请号：US15435838
申请日：2017-02-17
Applicant: Lam Research Corporation
Inventor： Andreas Fischer , Thorsten Lill , Richard Janek , John Boniface
IPC: H01L21/311 , C23F1/00 , H01J37/32
CPC classification number: H01L21/31122 , B81C2201/0135 , B81C2201/0142 , C23C16/0245 , C23F1/00 , C23F1/12 , C23F4/00 , H01J37/32009 , H01J37/32082 , H01J2237/334 , H01L21/30655 , H01L21/32136
Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.
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公开(公告)号：US20120032304A1
公开(公告)日：2012-02-09
申请号：US13275383
申请日：2011-10-18
Applicant: Mayumi Yamaguchi , Konami Izumi
Inventor： Mayumi Yamaguchi , Konami Izumi
IPC: H01L29/93
CPC classification number: H01L27/1203 , B81C1/00547 , B81C2201/0135 , H01L21/84 , H01L27/016 , H01L27/12 , H01L27/13
Abstract: It is an object of the present invention to manufacture a micromachine having a plurality of structural bodies with different functions and to shorten the time required for sacrifice layer etching in a process of manufacturing the micromachine. Another object of the present invention is to prevent a structural layer from being attached to a substrate after the sacrifice layer etching. In other words, an object of the present invention is to provide an inexpensive and high-value-added micromachine by improving throughput and yield. The sacrifice layer etching is conducted in multiple steps. In the multiple steps of the sacrifice layer etching, a part of the sacrifice layer that does not overlap with the structural layer is removed by the earlier sacrifice layer etching and a part of the sacrifice layer that is under the structural layer is removed by the later sacrifice layer etching.
Abstract translation: 本发明的目的是制造具有多个具有不同功能的结构体的微型机械，并且缩短在制造微机械过程中牺牲层蚀刻所需的时间。 本发明的另一个目的是在牺牲层蚀刻之后防止结构层附着到基底上。 换句话说，本发明的目的是通过提高生产量和产量来提供廉价和高附加值的微机械。 牺牲层蚀刻以多个步骤进行。 在牺牲层蚀刻的多个步骤中，通过较早的牺牲层蚀刻去除与结构层不重叠的牺牲层的一部分，并且在结构层之下的部分牺牲层被后面的部分去除 牺牲层蚀刻。
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公开(公告)号：US20190198345A1
公开(公告)日：2019-06-27
申请号：US16289428
申请日：2019-02-28
Applicant: Lam Research Corporation
Inventor： Andreas Fischer , Thorsten Lill , Richard Janek , John Boniface
IPC: H01L21/311 , H01J37/32 , C23F4/00 , C23F1/12 , C23F1/00 , C23C16/02 , H01L21/3065 , H01L21/3213
CPC classification number: H01L21/31122 , B81C2201/0135 , B81C2201/0142 , C23C16/0245 , C23F1/00 , C23F1/12 , C23F4/00 , H01J37/32009 , H01J37/32082 , H01J2237/334 , H01L21/30655 , H01L21/32136
Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.
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公开(公告)号：US09617142B1
公开(公告)日：2017-04-11
申请号：US14872123
申请日：2015-09-30
Applicant: MEMS DRIVE, INC.
Inventor： Roman Gutierrez , Tony Tang , Xiaolei Liu , Guiqin Wang , Matthew Ng
CPC classification number: H01L21/76816 , B81B3/0045 , B81B7/0029 , B81B2203/0353 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
Abstract: A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.
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公开(公告)号：US07214324B2
公开(公告)日：2007-05-08
申请号：US11107083
申请日：2005-04-15
Applicant: Dan W. Chilcott
Inventor： Dan W. Chilcott
IPC: C23F1/00
CPC classification number: B81B3/0072 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0315 , B81B2203/0338 , B81C2201/0135 , B81C2201/014 , B81C2201/017
Abstract: A technique for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer, with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling wafer at an opening of the cavity. Then, a bulk etch is performed on the first side of the handling wafer to modify the sidewall of the cavity to a second angle greater than about 90 degrees, with respect to the first side of the handling wafer at the opening of the cavity. Next, a second side of a second wafer is bonded to the first side of the handling wafer.
Abstract translation: 微电子机械结构的制造技术包括多个步骤。 最初，空腔形成处理晶片的第一侧，空腔的侧壁在空腔的开口处相对于处理晶片的第一侧形成大于约54.7度的第一角度。 然后，在处理晶片的第一侧上执行体蚀刻，以将空腔的侧壁相对于处理晶片在空腔开口处的第一侧大于约90度的第二角度进行修改。 接下来，将第二晶片的第二面接合到处理晶片的第一侧。
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Patent Agency Ranking
公开(公告)号：US11712766B2
公开(公告)日：2023-08-01
申请号：US16886161
申请日：2020-05-28
Inventor： Gaohua Zhu , Evan Fleming , Kimihiro Tsuchiya
CPC classification number: B23P15/26 , B81C1/00119 , B81C1/00396 , B81C1/00523 , F28D15/0233 , F28D15/046 , B81B2201/058 , B81C2201/0135
Abstract: One or more methods of fabricating a microscale canopy wick structure having an array of individual wicks having one or more canopy members. Each method includes selectively etching a substrate to control the thickness of the canopy members and also control the width of a fluid flow channel between adjacent wicks in a manner that enhances the overall performance of the microscale canopy wick structure.
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公开(公告)号：US20170320724A1
公开(公告)日：2017-11-09
申请号：US15441887
申请日：2017-02-24
Applicant: MEMS Drive, Inc.
Inventor： Roman Gutierrez , Tony Tang , Xiaolei Liu , Guiqin Wang , Matthew NG
CPC classification number: H01L21/76816 , B81B3/0045 , B81B7/0029 , B81B2203/0353 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
Abstract: A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.
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公开(公告)号：US20130137195A1
公开(公告)日：2013-05-30
申请号：US13674482
申请日：2012-11-12
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： Oliver James Ansell
IPC: H01L21/60
CPC classification number: H01J37/32963 , B81C99/0065 , B81C2201/0135 , B81C2201/0142 , H01J37/32972 , H01L22/26
Abstract: A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
Abstract translation: 公开了一种蚀刻衬底的整个宽度以暴露掩埋特征的方法。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。
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公开(公告)号：US20170088415A1
公开(公告)日：2017-03-30
申请号：US14872123
申请日：2015-09-30
Applicant: MEMS DRIVE, INC.
Inventor： ROMAN GUTIERREZ , TONY TANG , XIAOLEI LIU , GUIQIN WANG , MATTHEW NG
CPC classification number: H01L21/76816 , B81B3/0045 , B81B7/0029 , B81B2203/0353 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
Abstract: A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.
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公开(公告)号：US08709268B2
公开(公告)日：2014-04-29
申请号：US13674482
申请日：2012-11-12
Applicant: SPTS Technologies Limited
Inventor： Oliver James Ansell
CPC classification number: H01J37/32963 , B81C99/0065 , B81C2201/0135 , B81C2201/0142 , H01J37/32972 , H01L22/26
Abstract: A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
Abstract translation: 公开了一种蚀刻衬底的整个宽度以暴露掩埋特征的方法。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。
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