公开(公告)号：US09803272B2

公开(公告)日：2017-10-31

申请号：US14532098

申请日：2014-11-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Yun Zhou ,  Rhonda Hyndman ,  Stephen R Burgess

IPC: C23C14/35 ,  C23C14/00 ,  C23C14/10 ,  C23C14/34 ,  C01B33/12

CPC classification number: C23C14/0036 ,  C01B33/12 ,  C23C14/10 ,  C23C14/3485 ,  C23C14/35

Abstract: According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.