公开(公告)号：US09783886B2

公开(公告)日：2017-10-10

申请号：US15064631

申请日：2016-03-09

Applicant: SPTS Technologies Limited

Inventor： Daniel T Archard ,  Stephen R Burgess ,  Mark I Carruthers ,  Andrew Price ,  Keith E Buchanan ,  Katherine Crook

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/513

CPC classification number: C23C16/455 ,  C23C16/513 ,  H01J37/32633 ,  H01J37/32834

Abstract: A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.