公开(公告)号：US09165762B2

公开(公告)日：2015-10-20

申请号：US13869369

申请日：2013-04-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Kathrine Crook ,  Andrew Price ,  Mark Carruthers ,  Daniel Archard ,  Stephen Burgess

IPC: H01L21/316 ,  H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56

CPC classification number: H01L21/02274 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0234

Abstract: A method of forming silicon dioxide films using plasma enhanced chemical vapor deposition (PECVD) uses tetraethyl orthosilicate (TEOS), oxygen or a source of oxygen, and hydrogen as precursors. The method can be carried out at low temperatures in a range of 125 to 175° C. which is useful for manufacturing wafers with through silicon vias.

Abstract translation: 使用等离子体增强化学气相沉积（PECVD）形成二氧化硅膜的方法使用原硅酸四乙酯（TEOS），氧或氧源，以及氢作为前体。 该方法可以在125-175℃的低温下进行，这对于通过硅通孔制造晶片是有用的。

公开(公告)号：US10309014B2

公开(公告)日：2019-06-04

申请号：US15590063

申请日：2017-05-09

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Kathrine Crook ,  Mark Carruthers ,  Andrew Price

IPC: C23C16/44 ,  C23C16/452 ,  C23C16/52 ,  B08B7/00 ,  H01J37/32

Abstract: A method of cleaning a chamber of a plasma processing device with radicals includes creating a plasma within a remote plasma source which is separated from the chamber, the plasma including radicals and ions, cleaning the chamber by allowing radicals to enter the chamber from the remote plasma source while preventing the majority of the ions created in the remote plasma source from entering the chamber, detecting a DC bias developed on a component of the chamber during cleaning; and using the detected DC bias to determine an end-point of the cleaning and, on determination of the end-point, to stop the cleaning.

公开(公告)号：US10096468B2

公开(公告)日：2018-10-09

申请号：US15383162

申请日：2016-12-19

Applicant: SPTS Technologies Limited

Inventor： Kathrine Crook ,  Stephen R Burgess ,  Andrew Price

IPC: H01L21/02 ,  H01L29/06

Abstract: A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of O2 or with O2 introduced into the process at a flow rate of 250 sccm or less.

公开(公告)号：US09783886B2

公开(公告)日：2017-10-10

申请号：US15064631

申请日：2016-03-09

Applicant: SPTS Technologies Limited

Inventor： Daniel T Archard ,  Stephen R Burgess ,  Mark I Carruthers ,  Andrew Price ,  Keith E Buchanan ,  Katherine Crook

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/513

CPC classification number: C23C16/455 ,  C23C16/513 ,  H01J37/32633 ,  H01J37/32834

Abstract: A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.