Field emission cathode structures and devices utilizing such structures
    1.
    发明授权
    Field emission cathode structures and devices utilizing such structures 失效
    使用这种结构的场发射阴极结构和器件

    公开(公告)号:US3755704A

    公开(公告)日:1973-08-28

    申请号:US3755704D

    申请日:1970-02-06

    CPC classification number: H01J9/025 H01J1/3042 H01J2201/319

    Abstract: Vacuum devices incorporate electron or field forming sources formed by a cellular array of emission sites. The sources comprise a metal/insulator/metal film sandwich on a substrate with a cellular array of holes through the upper metal and insulator, leaving the edges of the upper metal electrode effectively exposed to the upper surface of the lower metal electrode. Sharp protuberances directed toward the upper electrode and constituting emitter tips of controlled configurations are formed on the exposed area of the lower electrode. A method of forming the structure includes starting with the metal/insulator/metal film sandwich having the cellular array of holes already formed and directing permanent electrode material into the cellular array of holes and masking or subsequently removable material onto the surface surrounding the holes whereby an individual sharp cone-like emitter is formed within each of the holes in the cellular array. Vacuum devices are formed from such structures. For example, a diode is formed either by making the masking material over each emission site an electrode or by removing the masking material and applying a conductive electrode material over each emission site.

    Abstract translation: 真空装置包含由发射部位的细胞阵列形成的电子或场成形源。 源包括金属/绝缘体/金属膜夹在基板上,孔穿过上金属和绝缘体,使上金属电极的边缘有效地暴露于下金属电极的上表面。 在下电极的暴露区域上形成有朝向上电极并构成受控结构的发射极尖端的锋利突起。 形成该结构的方法包括从金属/绝缘体/金属膜夹层开始,具有已经形成的孔的孔状阵列,并将永久电极材料引导到孔的多孔阵列中,并将掩模或随后的可移除材料掩盖在围绕孔的表面上, 在蜂窝阵列中的每个孔内形成单个尖锐的锥形发射器。 真空装置由这种结构形成。 例如,通过在每个发射部位上形成掩模材料,或者通过去除掩模材料并在每个发射部位上施加导电电极材料来形成二极管。

    Methods of producing field ionizer and field emission cathode structures
    2.
    发明授权
    Methods of producing field ionizer and field emission cathode structures 失效
    生产现场离子和场发射阴极结构的方法

    公开(公告)号:US3812559A

    公开(公告)日:1974-05-28

    申请号:US21653972

    申请日:1972-01-10

    Inventor: SPINDT C HEYNICK L

    CPC classification number: B82Y10/00 H01J9/025 H01J49/16 H01T23/00

    Abstract: Field-forming devices primarily useful as field ionizers and field emission cathodes and having as a basic element an array of closely spaced cones with sharp points supported on a substrate (in the most usual case conductive or semiconductive) are disclosed. Preferably, the field-forming structure is completed by a screen-like structure, e.g. as fine mesh screen, insulatively supported above the points with the center of apertures in the screen substantially aligned with the longitudinal axis of corresponding cones. A novel method of forming such structures includes placing a screen with a mesh corresponding to the desired number and packing density of sharp conical points in close proximity to, or in contact with, the substrate and projecting material through the screen onto the substrate whereby sharp cones of the material are formed on the substrates.

    Abstract translation: 现场形成装置主要用作场电离器和场发射阴极,并且具有作为基本元件的紧密间隔的锥体阵列,其具有支撑在衬底上的尖锐点(在最常见的情况下为导电或半导体)。 优选地,场形成结构通过屏幕状结构完成,例如, 作为细筛网,绝对地支撑在点之上,其中筛网中的孔的中心基本上与相应锥体的纵向轴线对齐。 形成这种结构的新颖方法包括将筛网与对应于尖锐锥形点的期望数量和填充密度的筛网相接近或接触基底并将材料通过筛网突出到基底上,由此尖锥体 的材料形成在基板上。

    Field emission cathode structures, devices utilizing such structures, and methods of producing such structures
    3.
    发明授权
    Field emission cathode structures, devices utilizing such structures, and methods of producing such structures 失效
    场发射阴极结构,使用这种结构的装置,以及生产这种结构的方法

    公开(公告)号:US3789471A

    公开(公告)日:1974-02-05

    申请号:US3789471D

    申请日:1972-01-03

    CPC classification number: H01J9/025 H01J1/3042 H01J2201/319

    Abstract: Vacuum devices incorporate electron or field forming sources formed by a cellular array of emission sites. The sources comprise a metal/insulator/metal film sandwich on a substrate with a cellular array of holes through the upper metal and insulator, leaving the edges of the upper metal electrode effectively exposed to the upper surface of the lower metal electrode. Sharp protuberances directed toward the upper electrode and constituting emitter tips of controlled configurations are formed on the exposed area of the lower electrode. A method of forming the structure includes starting with the metal/insulator/metal film sandwich having the cellular array of holes already formed and directing permanent electrode material into the cellular array of holes and masking or subsequently removable material onto the surface surrounding the holes whereby an individual sharp cone-like emitter is formed within each of the holes in the cellular array. Vacuum devices are formed from such structures. For example, a diode is formed either by making the masking material over each emission site an electrode or by removing the masking material and applying a conductive electrode material over each emission site.

    Abstract translation: 真空装置包含由发射部位的细胞阵列形成的电子或场成形源。 源包括金属/绝缘体/金属膜夹在基板上,孔穿过上金属和绝缘体,使上金属电极的边缘有效地暴露于下金属电极的上表面。 在下电极的暴露区域上形成有朝向上电极并构成受控结构的发射极尖端的锋利突起。 形成该结构的方法包括从金属/绝缘体/金属膜夹层开始,具有已经形成的孔的孔状阵列,并将永久电极材料引导到孔的多孔阵列中,并将掩模或随后的可移除材料掩盖在围绕孔的表面上, 在蜂窝阵列中的每个孔内形成单个尖锐的锥形发射器。 真空装置由这种结构形成。 例如,通过在每个发射部位上形成掩模材料,或者通过去除掩模材料并在每个发射部位上施加导电电极材料来形成二极管。

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