公开(公告)号：US20190172902A1

公开(公告)日：2019-06-06

申请号：US16267142

申请日：2019-02-04

申请人： STATS ChipPAC Pte. Ltd.

发明人： JinHee Jung ,  HyungSang Park ,  SungSoo Kim

IPC分类号： H01L49/02 ,  H05K1/18 ,  H01L23/538 ,  H01L21/683 ,  H01L23/00

CPC分类号： H01L28/40 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/25 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/82031 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/83005 ,  H01L2224/92144 ,  H05K1/185 ,  H05K3/4664 ,  H05K2201/10015

摘要： A semiconductor device comprises a first conductive layer. A second conductive layer is formed over the first conductive layer. A semiconductor component is disposed over the first conductive layer. The second conductive layer lies in a plane between a top surface of the semiconductor component and a bottom surface of the semiconductor component. A third conductive layer is formed over the semiconductor component opposite the first conductive layer. The semiconductor device includes a symmetrical structure. A first insulating layer is formed between the first conductive layer and semiconductor component. A second insulating layer is formed between the semiconductor component and third conductive layer. A height of the first insulating layer between the first conductive layer and semiconductor component is between 90% and 110% of a height of the second insulating layer between the semiconductor component and third conductive layer. The semiconductor component includes a passive device.

公开(公告)号：US10236337B2

公开(公告)日：2019-03-19

申请号：US15797107

申请日：2017-10-30

申请人： STATS ChipPAC Pte. Ltd.

发明人： JinHee Jung ,  HyungSang Park ,  SungSoo Kim

IPC分类号： H01L23/538 ,  H01L49/02 ,  H01L21/683 ,  H01L23/00 ,  H05K1/18 ,  H01L23/498 ,  H01L23/50 ,  H01L21/48 ,  H05K3/46

摘要： A semiconductor device comprises a first conductive layer. A second conductive layer is formed over the first conductive layer. A semiconductor component is disposed over the first conductive layer. The second conductive layer lies in a plane between a top surface of the semiconductor component and a bottom surface of the semiconductor component. A third conductive layer is formed over the semiconductor component opposite the first conductive layer. The semiconductor device includes a symmetrical structure. A first insulating layer is formed between the first conductive layer and semiconductor component. A second insulating layer is formed between the semiconductor component and third conductive layer. A height of the first insulating layer between the first conductive layer and semiconductor component is between 90% and 110% of a height of the second insulating layer between the semiconductor component and third conductive layer. The semiconductor component includes a passive device.

公开(公告)号：US10665662B2

公开(公告)日：2020-05-26

申请号：US16267142

申请日：2019-02-04

申请人： STATS ChipPAC Pte. Ltd.

发明人： JinHee Jung ,  HyungSang Park ,  SungSoo Kim

IPC分类号： H01L49/02 ,  H05K1/18 ,  H01L23/538 ,  H01L21/683 ,  H01L23/00 ,  H01L23/498 ,  H01L23/50 ,  H01L21/48 ,  H05K3/46

摘要： A semiconductor device comprises a first conductive layer. A second conductive layer is formed over the first conductive layer. A semiconductor component is disposed over the first conductive layer. The second conductive layer lies in a plane between a top surface of the semiconductor component and a bottom surface of the semiconductor component. A third conductive layer is formed over the semiconductor component opposite the first conductive layer. The semiconductor device includes a symmetrical structure. A first insulating layer is formed between the first conductive layer and semiconductor component. A second insulating layer is formed between the semiconductor component and third conductive layer. A height of the first insulating layer between the first conductive layer and semiconductor component is between 90% and 110% of a height of the second insulating layer between the semiconductor component and third conductive layer. The semiconductor component includes a passive device.

公开(公告)号：US20180053819A1

公开(公告)日：2018-02-22

申请号：US15797107

申请日：2017-10-30

申请人： STATS ChipPAC Pte. Ltd.

发明人： JinHee Jung ,  HyungSang Park ,  SungSoo Kim

IPC分类号： H01L49/02 ,  H01L23/00 ,  H01L21/683 ,  H01L23/538

CPC分类号： H01L28/40 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/25 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/82031 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/83005 ,  H01L2224/92144 ,  H05K1/185 ,  H05K3/4664 ,  H05K2201/10015

摘要： A semiconductor device comprises a first conductive layer. A second conductive layer is formed over the first conductive layer. A semiconductor component is disposed over the first conductive layer. The second conductive layer lies in a plane between a top surface of the semiconductor component and a bottom surface of the semiconductor component. A third conductive layer is formed over the semiconductor component opposite the first conductive layer. The semiconductor device includes a symmetrical structure. A first insulating layer is formed between the first conductive layer and semiconductor component. A second insulating layer is formed between the semiconductor component and third conductive layer. A height of the first insulating layer between the first conductive layer and semiconductor component is between 90% and 110% of a height of the second insulating layer between the semiconductor component and third conductive layer. The semiconductor component includes a passive device.