公开(公告)号：US20160016792A1

公开(公告)日：2016-01-21

申请号：US14873091

申请日：2015-10-01

Applicant: STMicroelectronics, Inc.

Inventor： Ming Fang

IPC: B81C1/00

CPC classification number: B81C1/00666 ,  B81B7/0029 ,  B81B2203/0181 ,  B81C1/0019 ,  B81C2201/0169 ,  B81C2201/112

Abstract: A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on a portion of at least four different surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.

Abstract translation: 一种制造微结构的方法，例如MEMS或NEMS器件，包括在微结构的可移动部件的表面上形成保护层。 例如，可以在可相对于微结构的基板移动的多晶硅块的至少四个不同表面的一部分上形成硅化物层。 该过程可以是自对准的。

公开(公告)号：US20140304990A1

公开(公告)日：2014-10-16

申请号：US14316487

申请日：2014-06-26

Applicant: STMicroelectronics, Inc.

Inventor： Ming Fang ,  Fuchao Wang

IPC: B41J2/16

CPC classification number: B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/41 ,  Y10T29/49401 ,  Y10T29/49826

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

Abstract translation: 集成半导体加热组件包括半导体衬底，形成在其中的腔室以及与腔室流体连通的出口，允许流体响应于加热室而离开腔室。 集成加热组件包括邻近腔室的第一加热元件，该第一加热元件可以产生高于选定阈值的热量，并将腔室中的流体朝向出口偏压。 第二加热元件邻近出口定位以产生高于所选阈值的热量，便于流体通过出口远离腔室的运动。 添加第二加热元件减少了每个加热元件发出的热量，并使吸热材料的厚度最小化到出口的开口端。 由于这样的材料是昂贵的，所以这降低了组件的制造成本和零售价格，同时提高了其效率和使用寿命。

公开(公告)号：US10654714B2

公开(公告)日：2020-05-19

申请号：US15234312

申请日：2016-08-11

Applicant: STMICROELECTRONICS, INC.

Inventor： Ming Fang ,  Fuchao Wang

IPC: B81C1/00 ,  B41J2/14 ,  B41J2/16 ,  B81B1/00 ,  H01L49/02

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

公开(公告)号：US09434166B2

公开(公告)日：2016-09-06

申请号：US14316487

申请日：2014-06-26

Applicant: STMicroelectronics, Inc.

Inventor： Ming Fang ,  Fuchao Wang

IPC: F24H1/18 ,  F24H1/20 ,  B41J2/05 ,  B41J2/16 ,  B41J2/14

CPC classification number: B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/41 ,  Y10T29/49401 ,  Y10T29/49826

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

公开(公告)号：US09604845B2

公开(公告)日：2017-03-28

申请号：US14873091

申请日：2015-10-01

Applicant: STMicroelectronics, Inc.

Inventor： Ming Fang

IPC: H01L21/00 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00666 ,  B81B7/0029 ,  B81B2203/0181 ,  B81C1/0019 ,  B81C2201/0169 ,  B81C2201/112

Abstract: A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on a portion of at least four different surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.