公开(公告)号：US20140346588A1

公开(公告)日：2014-11-27

申请号：US14283045

申请日：2014-05-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Giuseppe MORALE ,  Carlo MAGRO ,  Domenico MURABITO ,  Tiziana CUSCANI

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/1095 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/3247 ,  H01L29/0634 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

Abstract: A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5.

Abstract translation: 一种制造半导体功率器件的方法，包括以下步骤：在具有第一类导电性的半导体本体中形成沟槽; 通过外延生长部分地用半导体材料填充沟槽，以便获得具有第二类导电性并具有内腔的第一柱。 外延生长包括同时供应气体中含有第二类导电性掺杂离子的气体，气态形式的盐酸HCl和气态的二氯硅烷DCS，使得HCl与DCS的量之间的比值为 3.5至5.5。

公开(公告)号：US20150349052A1

公开(公告)日：2015-12-03

申请号：US14824813

申请日：2015-08-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe SAGGIO ,  Domenico MURABITO ,  Angelo MAGRI'

IPC: H01L29/06 ,  H01L29/739 ,  H01L27/088 ,  H01L29/08 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L29/0634 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/086 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7811

Abstract: An embodiment of a structure for a high voltage device of the type which comprises at least a semiconductor substrate being covered by an epitaxial layer of a first type of conductivity, wherein a plurality of column structures are realized, which column structures comprises high aspect ratio deep trenches, said epitaxial layer being in turn covered by an active surface area wherein said high voltage device is realized, each of the column structures comprising at least an external portion being in turn realized by a silicon epitaxial layer of a second type of conductivity, opposed than said first type of conductivity and having a dopant charge which counterbalances the dopant charge being in said epitaxial layer outside said column structures, as well as a dielectric filling portion which is realized inside said external portion in order to completely fill said deep trench.

Abstract translation: 一种用于高压器件的结构的实施例，其包括至少半导体衬底被第一导电类型的外延层覆盖，其中实现了多个柱结构，哪些柱结构包括高纵横比深度 所述外延层又被活性表面积覆盖，其中所述高电压器件被实现，所述列结构中的至少一个外部部分又由第二导电类型的硅外延层实现，所述硅外延层相反 比所述第一类型的导电性和具有使在所述列结构之外的所述外延层中的掺杂剂电荷平衡的掺杂剂电荷以及在所述外部部分内部实现的电介质填充部分，以便完全填充所述深沟槽。