公开(公告)号：US20240272088A1

公开(公告)日：2024-08-15

申请号：US18168017

申请日：2023-02-13

Applicant: STMicroelectronics S.r.l.

Inventor： Michele Calabretta ,  Francesco Rundo ,  Salvatore Coffa ,  Marco Alfio Torrisi ,  Riccardo Emanuele Sarpietro

IPC: G01N21/95 ,  G06T7/00

CPC classification number: G01N21/9501 ,  G06T7/0004 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: In an embodiment, a method includes: capturing a first image of a power module, the power module including a power electronics circuit, the power electronics circuit including power semiconductor dies; identifying positions of the power semiconductor dies in the first image with a die detection model; extracting second images of the power semiconductor dies from the first image according to the positions of the power semiconductor dies in the first image; and identifying defects of the power semiconductor dies in the second images with a defect detection model, the defect detection model being different from the die detection model.

公开(公告)号：US11482503B2

公开(公告)日：2022-10-25

申请号：US16811964

申请日：2020-03-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Michele Calabretta ,  Crocifisso Marco Antonio Renna ,  Sebastiano Russo ,  Marco Alfio Torrisi

IPC: H01L23/00 ,  B23K35/26 ,  C22C13/00 ,  H01L23/31 ,  H01L23/495 ,  B23K101/40

Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

公开(公告)号：US11756916B2

公开(公告)日：2023-09-12

申请号：US17933016

申请日：2022-09-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Michele Calabretta ,  Crocifisso Marco Antonio Renna ,  Sebastiano Russo ,  Marco Alfio Torrisi

IPC: H01L23/00 ,  B23K35/26 ,  C22C13/00 ,  H01L23/31 ,  H01L23/495 ,  B23K101/40

CPC classification number: H01L24/29 ,  B23K35/262 ,  C22C13/00 ,  H01L23/3121 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49579 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  B23K2101/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/2912 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2924/014 ,  H01L2924/20109

Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.